JPS57173831A - Method of forming resist pattern for microscopic fabrication - Google Patents
Method of forming resist pattern for microscopic fabricationInfo
- Publication number
- JPS57173831A JPS57173831A JP56059096A JP5909681A JPS57173831A JP S57173831 A JPS57173831 A JP S57173831A JP 56059096 A JP56059096 A JP 56059096A JP 5909681 A JP5909681 A JP 5909681A JP S57173831 A JPS57173831 A JP S57173831A
- Authority
- JP
- Japan
- Prior art keywords
- resist pattern
- aromatic amine
- far ultraviolet
- solution
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
PURPOSE:To obtain a resist pattern for use in microscopic fabrication of highly integrated semiconductor parts, by exposing an organic film coated on a substrate to far ultraviolet rays, immersing it in an aromatic amine solution, baking it, and further immersing it in a similar solution. CONSTITUTION:An organic polymer film containing epoxy groups is coated on a substrate, and exposed to far ultraviolet rays to form a pattern, immersed in a solution containing 2-10% aromatic amine at 15-30 deg.C, and baked at 100- 300 deg.C. It is again immersed in a solution containing a >=10% aromatic amine at >=40 deg.C, thus permitting a high-resolution resist pattern formed by far ultraviolet ray irradiation to be applied to dry etching using ion plasma causing small side etching.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56059096A JPS57173831A (en) | 1981-04-21 | 1981-04-21 | Method of forming resist pattern for microscopic fabrication |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56059096A JPS57173831A (en) | 1981-04-21 | 1981-04-21 | Method of forming resist pattern for microscopic fabrication |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57173831A true JPS57173831A (en) | 1982-10-26 |
JPS6410060B2 JPS6410060B2 (en) | 1989-02-21 |
Family
ID=13103453
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56059096A Granted JPS57173831A (en) | 1981-04-21 | 1981-04-21 | Method of forming resist pattern for microscopic fabrication |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57173831A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0394741A2 (en) * | 1989-04-24 | 1990-10-31 | Siemens Aktiengesellschaft | Deep UV etch resistant system |
-
1981
- 1981-04-21 JP JP56059096A patent/JPS57173831A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0394741A2 (en) * | 1989-04-24 | 1990-10-31 | Siemens Aktiengesellschaft | Deep UV etch resistant system |
Also Published As
Publication number | Publication date |
---|---|
JPS6410060B2 (en) | 1989-02-21 |
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