JPS57169283A - Thermoelectric element - Google Patents

Thermoelectric element

Info

Publication number
JPS57169283A
JPS57169283A JP56053799A JP5379981A JPS57169283A JP S57169283 A JPS57169283 A JP S57169283A JP 56053799 A JP56053799 A JP 56053799A JP 5379981 A JP5379981 A JP 5379981A JP S57169283 A JPS57169283 A JP S57169283A
Authority
JP
Japan
Prior art keywords
state
phase
mixed
ferrous silicide
base body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56053799A
Other languages
Japanese (ja)
Inventor
Takashi Nakajima
Makoto Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Priority to JP56053799A priority Critical patent/JPS57169283A/en
Publication of JPS57169283A publication Critical patent/JPS57169283A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Silicon Compounds (AREA)

Abstract

PURPOSE:To reduce internal resistance without deteriorating thermoelectric function to enhance power efficiency, by forming a part of ferrous silicide in a state of a metallic phase or the mixed phase of metal and semiconductor in case of using ferrous silicide for a thermocouple. CONSTITUTION:A P type ferrous silicide base body 10 and an N type ferrous silicide base body 11 are joined to an integral body via a PN junction region 12 with the other parts being insulated each other by a clearance 13. A high temerature part 14 of the bodies 10, 11 is in a state of alpha phase or the mixed state of alpha and beta phases (mixed crystal). Thus, this part is reduced in specific resistance and increased in maximum take-out power.
JP56053799A 1981-04-11 1981-04-11 Thermoelectric element Pending JPS57169283A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56053799A JPS57169283A (en) 1981-04-11 1981-04-11 Thermoelectric element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56053799A JPS57169283A (en) 1981-04-11 1981-04-11 Thermoelectric element

Publications (1)

Publication Number Publication Date
JPS57169283A true JPS57169283A (en) 1982-10-18

Family

ID=12952857

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56053799A Pending JPS57169283A (en) 1981-04-11 1981-04-11 Thermoelectric element

Country Status (1)

Country Link
JP (1) JPS57169283A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5547598A (en) * 1993-08-04 1996-08-20 Technova, Inc. Thermoelectric semiconductor material
JP2002353526A (en) * 2001-05-25 2002-12-06 Japan Science & Technology Corp ELECTRODE-FORMING METHOD FOR beta-FeSi2 ELEMENT
AT410492B (en) * 2000-05-02 2003-05-26 Span Gerhard Dipl Ing Dr THERMOELECTRIC ELEMENT WITH AT LEAST ONE N LAYER AND AT LEAST ONE P LAYER
JP2017017068A (en) * 2015-06-26 2017-01-19 国立研究開発法人産業技術総合研究所 Silicon microcrystal composite film, thermoelectric material and manufacturing method thereof

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5547598A (en) * 1993-08-04 1996-08-20 Technova, Inc. Thermoelectric semiconductor material
AT410492B (en) * 2000-05-02 2003-05-26 Span Gerhard Dipl Ing Dr THERMOELECTRIC ELEMENT WITH AT LEAST ONE N LAYER AND AT LEAST ONE P LAYER
US6762484B2 (en) 2000-05-02 2004-07-13 Gerhard Span Thermoelectric element
JP2002353526A (en) * 2001-05-25 2002-12-06 Japan Science & Technology Corp ELECTRODE-FORMING METHOD FOR beta-FeSi2 ELEMENT
JP2017017068A (en) * 2015-06-26 2017-01-19 国立研究開発法人産業技術総合研究所 Silicon microcrystal composite film, thermoelectric material and manufacturing method thereof

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