JPS57160121A - Semiamorphous semiconductor device - Google Patents

Semiamorphous semiconductor device

Info

Publication number
JPS57160121A
JPS57160121A JP4497881A JP4497881A JPS57160121A JP S57160121 A JPS57160121 A JP S57160121A JP 4497881 A JP4497881 A JP 4497881A JP 4497881 A JP4497881 A JP 4497881A JP S57160121 A JPS57160121 A JP S57160121A
Authority
JP
Japan
Prior art keywords
semiconductor
crystallized
cluster
bonding arm
portin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4497881A
Other languages
Japanese (ja)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Original Assignee
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HANDOUTAI ENERUGII KENKYUSHO KK, Semiconductor Energy Laboratory Co Ltd filed Critical HANDOUTAI ENERUGII KENKYUSHO KK
Priority to JP4497881A priority Critical patent/JPS57160121A/en
Publication of JPS57160121A publication Critical patent/JPS57160121A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To increase an electric conductivity by a method wherein a crystallized semiconductor region is arranged so as to surround around non-crystallized semiconductor region and a neutralized element of unpaired bonding arm is locally contained at a high density. CONSTITUTION:A massive cluster 30 is stacked on a substrate to form a semiconductor structure. The clusters 30 are positioned adjacent to each other in the boundary 41 and become a semiconductor including an outer circumference portion 27 having crystallizability while the central portin 28 thereof becomes a semiconductor having non-crystallizability. Neutralized element of unpaired bonding arm is concentrated locally and densely in the noncrystallized central portin 28 as compared with the outer circumferential portion 27 and serves to neutralize the unpaired bonding arm of silicon liable to exist in the noncrystalline region. The semiconductor serves to perform the activation for silane to form the cluster. Ionized helium or the like are collided with each other during the flight of the cluster, the outer periphery is crystallized with the energy generated by the collision and the crystallized films are stacked on the substrate.
JP4497881A 1981-03-27 1981-03-27 Semiamorphous semiconductor device Pending JPS57160121A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4497881A JPS57160121A (en) 1981-03-27 1981-03-27 Semiamorphous semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4497881A JPS57160121A (en) 1981-03-27 1981-03-27 Semiamorphous semiconductor device

Publications (1)

Publication Number Publication Date
JPS57160121A true JPS57160121A (en) 1982-10-02

Family

ID=12706551

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4497881A Pending JPS57160121A (en) 1981-03-27 1981-03-27 Semiamorphous semiconductor device

Country Status (1)

Country Link
JP (1) JPS57160121A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6307214B1 (en) 1997-06-06 2001-10-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor thin film and semiconductor device
US6452211B1 (en) 1997-06-10 2002-09-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor thin film and semiconductor device
US6545320B2 (en) 1998-12-03 2003-04-08 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and semiconductor device
DE19833237B4 (en) * 1997-07-23 2011-10-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor thin film and semiconductor device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6307214B1 (en) 1997-06-06 2001-10-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor thin film and semiconductor device
DE19825081B4 (en) * 1997-06-06 2012-10-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor thin film and semiconductor device and manufacturing method
US6452211B1 (en) 1997-06-10 2002-09-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor thin film and semiconductor device
US6693300B2 (en) 1997-06-10 2004-02-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor thin film and semiconductor device
DE19833237B4 (en) * 1997-07-23 2011-10-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor thin film and semiconductor device
US6545320B2 (en) 1998-12-03 2003-04-08 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and semiconductor device
US7011995B2 (en) 1998-12-03 2006-03-14 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and semiconductor circuit
US7462517B2 (en) 1998-12-03 2008-12-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and semiconductor circuit

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