JPS57156399A - Preparation of boron nitride of cubic system - Google Patents

Preparation of boron nitride of cubic system

Info

Publication number
JPS57156399A
JPS57156399A JP4056481A JP4056481A JPS57156399A JP S57156399 A JPS57156399 A JP S57156399A JP 4056481 A JP4056481 A JP 4056481A JP 4056481 A JP4056481 A JP 4056481A JP S57156399 A JPS57156399 A JP S57156399A
Authority
JP
Japan
Prior art keywords
boron nitride
cubic system
preparation
sr3b2n4
ba3b2n4
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4056481A
Other languages
Japanese (ja)
Other versions
JPS5938165B2 (en
Inventor
Tadashi Endo
Minoru Iwata
Osamu Fukunaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute for Research in Inorganic Material
Original Assignee
National Institute for Research in Inorganic Material
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Institute for Research in Inorganic Material filed Critical National Institute for Research in Inorganic Material
Priority to JP4056481A priority Critical patent/JPS5938165B2/en
Publication of JPS57156399A publication Critical patent/JPS57156399A/en
Publication of JPS5938165B2 publication Critical patent/JPS5938165B2/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To prepare easily a boron nitride of cubic system having a large crystal particle size, by heating Sr3B2N4 or Ba3B2N4 and hexagonal boron nitride under the thermodynamic stable pressure of the boron nitride of cubic system at >= a specific temperature. CONSTITUTION:Sr3B2N4 or Ba3B2N4 and hexagonal boron nitride are heated under the thermodynamic stable pressure of boron nitride of cubic system at >=125 deg.C. By this method, since the tolerance value widths of temperature and pressure range are wide, the growth rate of crystal particle is controlled easily, so that high-purity and high-quality boron nitride crystal of cubic system having large particle diameter can be produced easily.
JP4056481A 1981-03-20 1981-03-20 Manufacturing method of cubic boron nitride Expired JPS5938165B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4056481A JPS5938165B2 (en) 1981-03-20 1981-03-20 Manufacturing method of cubic boron nitride

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4056481A JPS5938165B2 (en) 1981-03-20 1981-03-20 Manufacturing method of cubic boron nitride

Publications (2)

Publication Number Publication Date
JPS57156399A true JPS57156399A (en) 1982-09-27
JPS5938165B2 JPS5938165B2 (en) 1984-09-14

Family

ID=12583957

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4056481A Expired JPS5938165B2 (en) 1981-03-20 1981-03-20 Manufacturing method of cubic boron nitride

Country Status (1)

Country Link
JP (1) JPS5938165B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5973410A (en) * 1982-10-15 1984-04-25 Showa Denko Kk Preparation of boron nitride of cubic system
JPS6168398A (en) * 1984-09-13 1986-04-08 Showa Denko Kk Growing method of cubic type boron nitride crystal
JPS6339617A (en) * 1986-07-30 1988-02-20 デ　ビアス　インダストリアル　ダイアモンド　デイビジヨン　（プロプライエタリイ）　リミテツド Reaction container and production of cbn crystal

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5973410A (en) * 1982-10-15 1984-04-25 Showa Denko Kk Preparation of boron nitride of cubic system
JPH0347132B2 (en) * 1982-10-15 1991-07-18 Showa Denko Kk
JPS6168398A (en) * 1984-09-13 1986-04-08 Showa Denko Kk Growing method of cubic type boron nitride crystal
JPS6357098B2 (en) * 1984-09-13 1988-11-10 Showa Denko Kk
JPS6339617A (en) * 1986-07-30 1988-02-20 デ　ビアス　インダストリアル　ダイアモンド　デイビジヨン　（プロプライエタリイ）　リミテツド Reaction container and production of cbn crystal

Also Published As

Publication number Publication date
JPS5938165B2 (en) 1984-09-14

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