JPS57145374A - Mis type semiconductor integrated circuit device - Google Patents

Mis type semiconductor integrated circuit device

Info

Publication number
JPS57145374A
JPS57145374A JP56031575A JP3157581A JPS57145374A JP S57145374 A JPS57145374 A JP S57145374A JP 56031575 A JP56031575 A JP 56031575A JP 3157581 A JP3157581 A JP 3157581A JP S57145374 A JPS57145374 A JP S57145374A
Authority
JP
Japan
Prior art keywords
oxide film
films
wiring
substrate
high voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56031575A
Other languages
Japanese (ja)
Inventor
Kazuo Yudasaka
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP56031575A priority Critical patent/JPS57145374A/en
Publication of JPS57145374A publication Critical patent/JPS57145374A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain the high apeed, highly integrated MIS IC, by providing two or more field insulating films having different thicknesses on a part of the surface of the semiconductor, and forming a first electrode wiring. CONSTITUTION:When a plurality of field oxide films are provided on the P type Si substrate 1, they are constituted by the oxide films wherein the combination of a thin oxide film 3 and a thick oxide film 2 and the combination of the thin oxide film 3 and the thick oxide film 2 are formed in a step shaped unitary body. Then gate electrodes 5 are attached to the central part of the substrate 1 exposed between these oxide films through thin gate insulating films 4, respectively. Specified N type source and drain regions are provided on both sides of the electrodes 5 in the substrate 1. Thereafter, a low voltage power source electrode 6, a high voltage MOS transistor driving output electrode wiring 7, a high voltage power source electrode 8, and a high voltage output electrode 9 are provided on the area from said regions to the top end of the insulating films. At this time, since the transistor wiring 7 is positioned on the thick field oxide film 2, the threshold voltage can be increased, the wiring capacity becomes small, and the operation speed becomes high.
JP56031575A 1981-03-05 1981-03-05 Mis type semiconductor integrated circuit device Pending JPS57145374A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56031575A JPS57145374A (en) 1981-03-05 1981-03-05 Mis type semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56031575A JPS57145374A (en) 1981-03-05 1981-03-05 Mis type semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS57145374A true JPS57145374A (en) 1982-09-08

Family

ID=12334969

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56031575A Pending JPS57145374A (en) 1981-03-05 1981-03-05 Mis type semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS57145374A (en)

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