JPS57139930A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57139930A JPS57139930A JP2582481A JP2582481A JPS57139930A JP S57139930 A JPS57139930 A JP S57139930A JP 2582481 A JP2582481 A JP 2582481A JP 2582481 A JP2582481 A JP 2582481A JP S57139930 A JPS57139930 A JP S57139930A
- Authority
- JP
- Japan
- Prior art keywords
- film
- moisture
- silicate glass
- semiconductor device
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052698 phosphorus Inorganic materials 0.000 abstract 3
- 239000011574 phosphorus Substances 0.000 abstract 3
- 239000005368 silicate glass Substances 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 abstract 2
- 238000002161 passivation Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To enhance the reliability of a semiconductor device against humidity by covering the overall surface exposed including the side surface of the hole of an insulating film with phosphorus silicate glass having 7mol% or higher with a moisture resistant passivation film. CONSTITUTION:An oxidized silicon film 2 is formed on a semiconductor substrate 1, a nitrided silicon film 4 is formed on a high density phosphorus silicate glass film 3, a through hole reaching the substrate 1 and a through hole 7 reaching the film 2 are formed at the region except the element forming region. As obvious from the drawing, the film 3 is not exposed directly with the moisture, and particularly when the nitrided silicon film having strong barrier effect against the moisture is used for the passivation film, phosphoric acid due to the reaction of the high density phosphorus silicate glass with moisture is not produced, thereby producing no crack and improving the reliability of a semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2582481A JPS57139930A (en) | 1981-02-24 | 1981-02-24 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2582481A JPS57139930A (en) | 1981-02-24 | 1981-02-24 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57139930A true JPS57139930A (en) | 1982-08-30 |
Family
ID=12176602
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2582481A Pending JPS57139930A (en) | 1981-02-24 | 1981-02-24 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57139930A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6112033A (en) * | 1984-06-27 | 1986-01-20 | Sony Corp | Semiconductor device |
| JPS61112386A (en) * | 1984-11-07 | 1986-05-30 | Hitachi Ltd | Semiconductor light receiving element |
| US5583077A (en) * | 1995-04-04 | 1996-12-10 | Taiwan Semiconductor Manufacturing Company Ltd | Integrated dual layer passivation process to suppress stress-induced metal voids |
-
1981
- 1981-02-24 JP JP2582481A patent/JPS57139930A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6112033A (en) * | 1984-06-27 | 1986-01-20 | Sony Corp | Semiconductor device |
| JPS61112386A (en) * | 1984-11-07 | 1986-05-30 | Hitachi Ltd | Semiconductor light receiving element |
| US5583077A (en) * | 1995-04-04 | 1996-12-10 | Taiwan Semiconductor Manufacturing Company Ltd | Integrated dual layer passivation process to suppress stress-induced metal voids |
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