JPS5713770A - V-mos device with self centering multiple electrodes - Google Patents
V-mos device with self centering multiple electrodesInfo
- Publication number
- JPS5713770A JPS5713770A JP5306281A JP5306281A JPS5713770A JP S5713770 A JPS5713770 A JP S5713770A JP 5306281 A JP5306281 A JP 5306281A JP 5306281 A JP5306281 A JP 5306281A JP S5713770 A JPS5713770 A JP S5713770A
- Authority
- JP
- Japan
- Prior art keywords
- mos device
- multiple electrodes
- self centering
- centering multiple
- self
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
- H10B12/395—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench the transistor being vertical
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/158,668 US4364074A (en) | 1980-06-12 | 1980-06-12 | V-MOS Device with self-aligned multiple electrodes |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5713770A true JPS5713770A (en) | 1982-01-23 |
JPH0230585B2 JPH0230585B2 (ja) | 1990-07-06 |
Family
ID=22569161
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5306281A Granted JPS5713770A (en) | 1980-06-12 | 1981-04-10 | V-mos device with self centering multiple electrodes |
Country Status (5)
Country | Link |
---|---|
US (1) | US4364074A (ja) |
EP (1) | EP0042084B1 (ja) |
JP (1) | JPS5713770A (ja) |
CA (1) | CA1159953A (ja) |
DE (1) | DE3165658D1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63135737A (ja) * | 1986-11-28 | 1988-06-08 | Shimizu Constr Co Ltd | クリ−ンル−ム |
Families Citing this family (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3375541D1 (en) * | 1982-02-10 | 1988-03-03 | Hitachi Ltd | Semiconductor memory and method for fabricating the same |
US4567641A (en) * | 1982-04-12 | 1986-02-04 | General Electric Company | Method of fabricating semiconductor devices having a diffused region of reduced length |
US4571512A (en) * | 1982-06-21 | 1986-02-18 | Eaton Corporation | Lateral bidirectional shielded notch FET |
US4553151A (en) * | 1982-09-23 | 1985-11-12 | Eaton Corporation | Bidirectional power FET with field shaping |
US4542396A (en) * | 1982-09-23 | 1985-09-17 | Eaton Corporation | Trapped charge bidirectional power FET |
US4541001A (en) * | 1982-09-23 | 1985-09-10 | Eaton Corporation | Bidirectional power FET with substrate-referenced shield |
JPS60152058A (ja) * | 1984-01-20 | 1985-08-10 | Toshiba Corp | 半導体記憶装置 |
USRE33261E (en) * | 1984-07-03 | 1990-07-10 | Texas Instruments, Incorporated | Trench capacitor for high density dynamic RAM |
US5208657A (en) * | 1984-08-31 | 1993-05-04 | Texas Instruments Incorporated | DRAM Cell with trench capacitor and vertical channel in substrate |
US5225697A (en) * | 1984-09-27 | 1993-07-06 | Texas Instruments, Incorporated | dRAM cell and method |
US4824793A (en) * | 1984-09-27 | 1989-04-25 | Texas Instruments Incorporated | Method of making DRAM cell with trench capacitor |
US4797373A (en) * | 1984-10-31 | 1989-01-10 | Texas Instruments Incorporated | Method of making dRAM cell with trench capacitor |
US4763177A (en) * | 1985-02-19 | 1988-08-09 | Texas Instruments Incorporated | Read only memory with improved channel length isolation and method of forming |
US5102817A (en) * | 1985-03-21 | 1992-04-07 | Texas Instruments Incorporated | Vertical DRAM cell and method |
US5135879A (en) * | 1985-03-26 | 1992-08-04 | Texas Instruments Incorporated | Method of fabricating a high density EPROM cell on a trench wall |
US5017977A (en) * | 1985-03-26 | 1991-05-21 | Texas Instruments Incorporated | Dual EPROM cells on trench walls with virtual ground buried bit lines |
US5164917A (en) * | 1985-06-26 | 1992-11-17 | Texas Instruments Incorporated | Vertical one-transistor DRAM with enhanced capacitance and process for fabricating |
US4751558A (en) * | 1985-10-31 | 1988-06-14 | International Business Machines Corporation | High density memory with field shield |
US4767722A (en) * | 1986-03-24 | 1988-08-30 | Siliconix Incorporated | Method for making planar vertical channel DMOS structures |
US4811067A (en) * | 1986-05-02 | 1989-03-07 | International Business Machines Corporation | High density vertically structured memory |
US4975384A (en) * | 1986-06-02 | 1990-12-04 | Texas Instruments Incorporated | Erasable electrically programmable read only memory cell using trench edge tunnelling |
US4829017A (en) * | 1986-09-25 | 1989-05-09 | Texas Instruments Incorporated | Method for lubricating a high capacity dram cell |
US4763180A (en) * | 1986-12-22 | 1988-08-09 | International Business Machines Corporation | Method and structure for a high density VMOS dynamic ram array |
US4874715A (en) * | 1987-05-20 | 1989-10-17 | Texas Instruments Incorporated | Read only memory with improved channel length control and method of forming |
US5109259A (en) * | 1987-09-22 | 1992-04-28 | Texas Instruments Incorporated | Multiple DRAM cells in a trench |
US4979004A (en) * | 1988-01-29 | 1990-12-18 | Texas Instruments Incorporated | Floating gate memory cell and device |
US5105245A (en) * | 1988-06-28 | 1992-04-14 | Texas Instruments Incorporated | Trench capacitor DRAM cell with diffused bit lines adjacent to a trench |
US5225363A (en) * | 1988-06-28 | 1993-07-06 | Texas Instruments Incorporated | Trench capacitor DRAM cell and method of manufacture |
KR920000708B1 (ko) * | 1988-07-22 | 1992-01-20 | 현대전자산업 주식회사 | 포토레지스트 에치백 기술을 이용한 트렌치 캐패시터 형성방법 |
US5072266A (en) | 1988-12-27 | 1991-12-10 | Siliconix Incorporated | Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry |
US5057887A (en) * | 1989-05-14 | 1991-10-15 | Texas Instruments Incorporated | High density dynamic ram cell |
US5017506A (en) * | 1989-07-25 | 1991-05-21 | Texas Instruments Incorporated | Method for fabricating a trench DRAM |
US5045490A (en) * | 1990-01-23 | 1991-09-03 | Texas Instruments Incorporated | Method of making a pleated floating gate trench EPROM |
US5053839A (en) * | 1990-01-23 | 1991-10-01 | Texas Instruments Incorporated | Floating gate memory cell and device |
US4964080A (en) * | 1990-03-09 | 1990-10-16 | Intel Corporation | Three-dimensional memory cell with integral select transistor |
US5276343A (en) * | 1990-04-21 | 1994-01-04 | Kabushiki Kaisha Toshiba | Semiconductor memory device having a bit line constituted by a semiconductor layer |
JPH0834302B2 (ja) * | 1990-04-21 | 1996-03-29 | 株式会社東芝 | 半導体記憶装置 |
US5250450A (en) * | 1991-04-08 | 1993-10-05 | Micron Technology, Inc. | Insulated-gate vertical field-effect transistor with high current drive and minimum overlap capacitance |
US5122848A (en) * | 1991-04-08 | 1992-06-16 | Micron Technology, Inc. | Insulated-gate vertical field-effect transistor with high current drive and minimum overlap capacitance |
US5229310A (en) * | 1991-05-03 | 1993-07-20 | Motorola, Inc. | Method for making a self-aligned vertical thin-film transistor in a semiconductor device |
US6015737A (en) * | 1991-07-26 | 2000-01-18 | Denso Corporation | Production method of a vertical type MOSFET |
US5670803A (en) * | 1995-02-08 | 1997-09-23 | International Business Machines Corporation | Three-dimensional SRAM trench structure and fabrication method therefor |
GB2347014B (en) | 1999-02-18 | 2003-04-16 | Zetex Plc | Semiconductor device |
US7121651B2 (en) * | 2002-05-09 | 2006-10-17 | Brother Kogyo Kabushiki Kaisha | Droplet-jetting device with pressure chamber expandable by elongation of pressure-generating section |
US6586291B1 (en) * | 2002-08-08 | 2003-07-01 | Lsi Logic Corporation | High density memory with storage capacitor |
US20090242941A1 (en) | 2008-03-25 | 2009-10-01 | International Business Machines Corporation | Structure and method for manufacturing device with a v-shape channel nmosfet |
FR2986106B1 (fr) * | 2012-01-20 | 2014-08-22 | Soitec Silicon On Insulator | Procede de fabrication de substrats semi-conducteur, et substrats semi-conducteur |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS538076A (en) * | 1976-07-12 | 1978-01-25 | Hitachi Ltd | Production of mis semiconductor device |
JPS5339892A (en) * | 1976-09-22 | 1978-04-12 | Siemens Ag | Semiconductor memory |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3975221A (en) * | 1973-08-29 | 1976-08-17 | American Micro-Systems, Inc. | Low capacitance V groove MOS NOR gate and method of manufacture |
US4003036A (en) * | 1975-10-23 | 1977-01-11 | American Micro-Systems, Inc. | Single IGFET memory cell with buried storage element |
US4065783A (en) * | 1976-10-18 | 1977-12-27 | Paul Hsiung Ouyang | Self-aligned double implanted short channel V-groove MOS device |
US4116720A (en) * | 1977-12-27 | 1978-09-26 | Burroughs Corporation | Method of making a V-MOS field effect transistor for a dynamic memory cell having improved capacitance |
JPS54154977A (en) * | 1978-05-29 | 1979-12-06 | Fujitsu Ltd | Semiconductor device and its manufacture |
JPS5537250U (ja) * | 1978-08-31 | 1980-03-10 | ||
US4225879A (en) * | 1979-01-26 | 1980-09-30 | Burroughs Corporation | V-MOS Field effect transistor for a dynamic memory cell having improved capacitance |
-
1980
- 1980-06-12 US US06/158,668 patent/US4364074A/en not_active Expired - Lifetime
-
1981
- 1981-04-10 JP JP5306281A patent/JPS5713770A/ja active Granted
- 1981-05-08 CA CA000377171A patent/CA1159953A/en not_active Expired
- 1981-05-25 DE DE8181104003T patent/DE3165658D1/de not_active Expired
- 1981-05-25 EP EP81104003A patent/EP0042084B1/en not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS538076A (en) * | 1976-07-12 | 1978-01-25 | Hitachi Ltd | Production of mis semiconductor device |
JPS5339892A (en) * | 1976-09-22 | 1978-04-12 | Siemens Ag | Semiconductor memory |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63135737A (ja) * | 1986-11-28 | 1988-06-08 | Shimizu Constr Co Ltd | クリ−ンル−ム |
Also Published As
Publication number | Publication date |
---|---|
DE3165658D1 (en) | 1984-09-27 |
EP0042084B1 (en) | 1984-08-22 |
JPH0230585B2 (ja) | 1990-07-06 |
CA1159953A (en) | 1984-01-03 |
EP0042084A1 (en) | 1981-12-23 |
US4364074A (en) | 1982-12-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5713770A (en) | V-mos device with self centering multiple electrodes | |
GB2067411B (en) | Electrode lead | |
JPS56163662A (en) | Endocardium electrode device | |
GB2071152B (en) | Catalytic electrodes | |
JPS5739777A (en) | Cell line | |
JPS5761276A (en) | Contact retaining device | |
AU547735B2 (en) | Electrode device | |
JPS5615562A (en) | Electrode | |
GB2086135B (en) | Electrode and semiconductor device provided with the electrode | |
JPS5637160A (en) | Electrode structure | |
GB2088565B (en) | Potentiometric electrode | |
DE3176510D1 (en) | Reference electrode | |
GB2074190B (en) | Electrode | |
JPS55162432A (en) | Electrode | |
DE3165683D1 (en) | Electrocardiographic electrode device | |
JPS562623A (en) | Electrode | |
DE3162405D1 (en) | Device for view-taking with extended field | |
DE3164176D1 (en) | Contact arrangement | |
GB2075380B (en) | Rectangular electrode | |
GB2074075B (en) | Carbon electrodes | |
JPS56102028A (en) | Contact electrode unit | |
GB2066965B (en) | Reference electrode | |
DE3162521D1 (en) | Air-depolarised element with positive-plate electrodes | |
JPS56159169A (en) | Multiple electrode device | |
DE3168107D1 (en) | Electrode device |