JPS57136821A - Bias voltage producing circuit - Google Patents

Bias voltage producing circuit

Info

Publication number
JPS57136821A
JPS57136821A JP56174580A JP17458081A JPS57136821A JP S57136821 A JPS57136821 A JP S57136821A JP 56174580 A JP56174580 A JP 56174580A JP 17458081 A JP17458081 A JP 17458081A JP S57136821 A JPS57136821 A JP S57136821A
Authority
JP
Japan
Prior art keywords
bias voltage
misfetqb
misfet
gate
prescribed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56174580A
Other languages
Japanese (ja)
Inventor
Osamu Yamashiro
Toru Onodera
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56174580A priority Critical patent/JPS57136821A/en
Publication of JPS57136821A publication Critical patent/JPS57136821A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09441Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type
    • H03K19/09443Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type using a combination of enhancement and depletion transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To avoid the effect of applied voltage, by flowing the bias current which is prescribed by an MISFET connected in series to an MISFET with the gain and the drain connected to each other and with the gate and the source connected to each other to the 2nd MISFET. CONSTITUTION:An enhancement type MISFETQB with the gate and the drain connected to each other is connected in series to a depression type MISFETQC with the gate and the source connected to each other. Then a certain bias current prescribed by the MISFETQC is supplied to the MISFETQB. As a result, a prescribed constant bias voltage which is not substantially affected by the applied voltage can be delivered between the drain and the source of the MISFETQB.
JP56174580A 1981-11-02 1981-11-02 Bias voltage producing circuit Pending JPS57136821A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56174580A JPS57136821A (en) 1981-11-02 1981-11-02 Bias voltage producing circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56174580A JPS57136821A (en) 1981-11-02 1981-11-02 Bias voltage producing circuit

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP48127300A Division JPS5916419B2 (en) 1973-11-14 1973-11-14 MIS type semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS57136821A true JPS57136821A (en) 1982-08-24

Family

ID=15981034

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56174580A Pending JPS57136821A (en) 1981-11-02 1981-11-02 Bias voltage producing circuit

Country Status (1)

Country Link
JP (1) JPS57136821A (en)

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