JPS57136378A - Manufacture of semiconductor device for photovoltaic generator - Google Patents
Manufacture of semiconductor device for photovoltaic generatorInfo
- Publication number
- JPS57136378A JPS57136378A JP57005097A JP509782A JPS57136378A JP S57136378 A JPS57136378 A JP S57136378A JP 57005097 A JP57005097 A JP 57005097A JP 509782 A JP509782 A JP 509782A JP S57136378 A JPS57136378 A JP S57136378A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor
- polycrystalline
- substrate
- electromotive force
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000001678 irradiating effect Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To simplify a process and reduce a cost by a method wherein a semiconductor layer provided on a substrate which has a conductive layer is formed to be a laminated structure of P-I-N junctions, and by a light irradiating this junction region, photovoltaic electromotive force is generated. CONSTITUTION:On a substrate 1 which is an insulated carrier covered with a metal film 2, by the first layer of polycrystalline semiconductor 5 of one conductive type and the third layer of polycrystalline semiconductor 6 of reversely conductive type being attached to be laminated with an intermediary of the second layer of an intrinsic semiconductor film, a P-I-N junction is obtained. An anti-reflection protective film 4 is formed over it, and a long striped opposite electrode is provided to be brought into contact with the third layer of polycrystalline layer 6. By irradiating with light, a photovolatic electromotive force is obtained. By this method a solar battery or the like is formed with a simple process and a low cost.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57005097A JPS57136378A (en) | 1982-01-16 | 1982-01-16 | Manufacture of semiconductor device for photovoltaic generator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57005097A JPS57136378A (en) | 1982-01-16 | 1982-01-16 | Manufacture of semiconductor device for photovoltaic generator |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP49071738A Division JPS51890A (en) | 1974-06-20 | 1974-06-20 | Handotaisochi oyobi sonosakuseihoho |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57136378A true JPS57136378A (en) | 1982-08-23 |
Family
ID=11601871
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57005097A Pending JPS57136378A (en) | 1982-01-16 | 1982-01-16 | Manufacture of semiconductor device for photovoltaic generator |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57136378A (en) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3462311A (en) * | 1966-05-20 | 1969-08-19 | Globe Union Inc | Semiconductor device having improved resistance to radiation damage |
JPS4911086A (en) * | 1972-05-26 | 1974-01-31 | ||
JPS4957772A (en) * | 1972-10-03 | 1974-06-05 | ||
JPS4971738A (en) * | 1972-10-02 | 1974-07-11 |
-
1982
- 1982-01-16 JP JP57005097A patent/JPS57136378A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3462311A (en) * | 1966-05-20 | 1969-08-19 | Globe Union Inc | Semiconductor device having improved resistance to radiation damage |
JPS4911086A (en) * | 1972-05-26 | 1974-01-31 | ||
JPS4971738A (en) * | 1972-10-02 | 1974-07-11 | ||
JPS4957772A (en) * | 1972-10-03 | 1974-06-05 |
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