JPS57136378A - Manufacture of semiconductor device for photovoltaic generator - Google Patents

Manufacture of semiconductor device for photovoltaic generator

Info

Publication number
JPS57136378A
JPS57136378A JP57005097A JP509782A JPS57136378A JP S57136378 A JPS57136378 A JP S57136378A JP 57005097 A JP57005097 A JP 57005097A JP 509782 A JP509782 A JP 509782A JP S57136378 A JPS57136378 A JP S57136378A
Authority
JP
Japan
Prior art keywords
layer
semiconductor
polycrystalline
substrate
electromotive force
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57005097A
Other languages
Japanese (ja)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP57005097A priority Critical patent/JPS57136378A/en
Publication of JPS57136378A publication Critical patent/JPS57136378A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To simplify a process and reduce a cost by a method wherein a semiconductor layer provided on a substrate which has a conductive layer is formed to be a laminated structure of P-I-N junctions, and by a light irradiating this junction region, photovoltaic electromotive force is generated. CONSTITUTION:On a substrate 1 which is an insulated carrier covered with a metal film 2, by the first layer of polycrystalline semiconductor 5 of one conductive type and the third layer of polycrystalline semiconductor 6 of reversely conductive type being attached to be laminated with an intermediary of the second layer of an intrinsic semiconductor film, a P-I-N junction is obtained. An anti-reflection protective film 4 is formed over it, and a long striped opposite electrode is provided to be brought into contact with the third layer of polycrystalline layer 6. By irradiating with light, a photovolatic electromotive force is obtained. By this method a solar battery or the like is formed with a simple process and a low cost.
JP57005097A 1982-01-16 1982-01-16 Manufacture of semiconductor device for photovoltaic generator Pending JPS57136378A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57005097A JPS57136378A (en) 1982-01-16 1982-01-16 Manufacture of semiconductor device for photovoltaic generator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57005097A JPS57136378A (en) 1982-01-16 1982-01-16 Manufacture of semiconductor device for photovoltaic generator

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP49071738A Division JPS51890A (en) 1974-06-20 1974-06-20 Handotaisochi oyobi sonosakuseihoho

Publications (1)

Publication Number Publication Date
JPS57136378A true JPS57136378A (en) 1982-08-23

Family

ID=11601871

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57005097A Pending JPS57136378A (en) 1982-01-16 1982-01-16 Manufacture of semiconductor device for photovoltaic generator

Country Status (1)

Country Link
JP (1) JPS57136378A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3462311A (en) * 1966-05-20 1969-08-19 Globe Union Inc Semiconductor device having improved resistance to radiation damage
JPS4911086A (en) * 1972-05-26 1974-01-31
JPS4957772A (en) * 1972-10-03 1974-06-05
JPS4971738A (en) * 1972-10-02 1974-07-11

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3462311A (en) * 1966-05-20 1969-08-19 Globe Union Inc Semiconductor device having improved resistance to radiation damage
JPS4911086A (en) * 1972-05-26 1974-01-31
JPS4971738A (en) * 1972-10-02 1974-07-11
JPS4957772A (en) * 1972-10-03 1974-06-05

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