JPS57128984A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57128984A JPS57128984A JP1546481A JP1546481A JPS57128984A JP S57128984 A JPS57128984 A JP S57128984A JP 1546481 A JP1546481 A JP 1546481A JP 1546481 A JP1546481 A JP 1546481A JP S57128984 A JPS57128984 A JP S57128984A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- electrode
- epitaxial layer
- silicon substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To increase the density of integration and improve yield by forming one conduction type region functioning as one electrode in a shape that is separated from the surface of a base body and a region, which continues to the region and extends, into the other conduction type region serving as the other electrode. CONSTITUTION:A P type region is diffused to the surface of the N type silicon substrate 13, the N type epitaxial layer 13' is grown on the region, and the P type region 16 is shaped near a boundary between the silicon substrate 13 and the epitaxial layer 13'. A P type impurity is diffused from the surface of the epitaxial layer 13' so as to reach the P type region 16, and a P type electrode extracting region 17 is formed. An opening is shaped at a position corresponding to the electrode extracting region 17 of a silicon oxide film 12 of the surface of the epitaxial layer 13', one electrode 11 is extracted from the opening and the other electrode 14 is extracted from the back of the silicon substrate 13.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1546481A JPS57128984A (en) | 1981-02-04 | 1981-02-04 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1546481A JPS57128984A (en) | 1981-02-04 | 1981-02-04 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57128984A true JPS57128984A (en) | 1982-08-10 |
Family
ID=11889512
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1546481A Pending JPS57128984A (en) | 1981-02-04 | 1981-02-04 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57128984A (en) |
-
1981
- 1981-02-04 JP JP1546481A patent/JPS57128984A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW269052B (en) | Process for semiconductor wafer, semiconductor integrated circuit and devices thereof | |
| JPS55105344A (en) | Semiconductor device | |
| JPS57128984A (en) | Semiconductor device | |
| JPS5617071A (en) | Semiconductor device | |
| JPS5339081A (en) | Semiconductor device | |
| JPS5538080A (en) | Semiconductor device | |
| JPS55154769A (en) | Manufacture of semiconductor device | |
| JPS644074A (en) | Semiconductor device | |
| JPS54107280A (en) | Semiconductor integrated circuit unit | |
| JPS5655060A (en) | Semiconductor integrated circuit device | |
| JPS5685858A (en) | Semiconductor device | |
| JPS57143859A (en) | Semiconductor device | |
| JPS55143048A (en) | Manufacture of semiconductor device | |
| JPS5626465A (en) | Semiconductor memory and the manufacturing process thereof | |
| JPS55105343A (en) | Manufacturing method of semiconductor device | |
| JPS5612779A (en) | Zener diode | |
| JPS6415974A (en) | Semiconductor device | |
| JPS6430254A (en) | Semiconductor device | |
| JPS55148467A (en) | Sos cmos semiconductor device and its manufacture | |
| JPS55132053A (en) | Manufacture of semiconductor device | |
| JPS5460579A (en) | Semiconductor device | |
| JPS5469089A (en) | Semiconductor device | |
| JPS5568677A (en) | Junction type field effect semiconductor | |
| JPS54121075A (en) | Thyristor | |
| JPS54134584A (en) | Semiconductor integrated circuit |