JPS57128083A - Photoelectric converting device - Google Patents
Photoelectric converting deviceInfo
- Publication number
- JPS57128083A JPS57128083A JP56013429A JP1342981A JPS57128083A JP S57128083 A JPS57128083 A JP S57128083A JP 56013429 A JP56013429 A JP 56013429A JP 1342981 A JP1342981 A JP 1342981A JP S57128083 A JPS57128083 A JP S57128083A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- semi
- electrode
- insulating film
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 abstract 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract 2
- 238000006243 chemical reaction Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 150000004767 nitrides Chemical class 0.000 abstract 2
- 229910021529 ammonia Inorganic materials 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To improve the junction characteristics on the heterogeneous junction surface and to increase the conversion efficiency of the photoelectric converting device by a method wherein a semi-insulating film, which is thick enough to flow a current on the junction surface of the device using the diode characteristics of a laminar structure, is provided on the subject device. CONSTITUTION:The transparrent electrode 43 with a prescribed thickness is formed on a transparrent substrate 44 made of glass or the like using a vacuum evaporating method, the electrode 43 is placed in a reaction furnace wherein conductive energy is used, and an N<+> type first semiconductor 42 is formed in the prescribed thickness. Subsequently, an intrinsic or substantially intrinsic second semiconductor 41 is formed, ammonia is brought into a plasmic state and introduced on the surface of the semiconductor 41, and then the above is nitrified and a nitride film of 5-10A in thickness is formed. On the surface of this nitride film, a P<+> type third semiconductor 45 is formed, and a semi-insulating film which is thick enough to flow a current is interposed between the second semiconductor 41 and the third semiconductor 45. Then, the second electrode 46 is provided on the semiconductor 45, an insulating or semi-insulating film is provided on the heterogeneous junction surface between P<+> or N<+> semiconductors 42 and 45, and an N<-> or P<-> substantially intrinsic semiconductor 41, and the improvement of the junction characteristics is achieved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56013429A JPS57128083A (en) | 1981-01-30 | 1981-01-30 | Photoelectric converting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56013429A JPS57128083A (en) | 1981-01-30 | 1981-01-30 | Photoelectric converting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57128083A true JPS57128083A (en) | 1982-08-09 |
| JPS6355790B2 JPS6355790B2 (en) | 1988-11-04 |
Family
ID=11832890
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56013429A Granted JPS57128083A (en) | 1981-01-30 | 1981-01-30 | Photoelectric converting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57128083A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5570076A (en) * | 1978-09-22 | 1980-05-27 | Univ Delaware | Method of manufacturing photocell |
-
1981
- 1981-01-30 JP JP56013429A patent/JPS57128083A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5570076A (en) * | 1978-09-22 | 1980-05-27 | Univ Delaware | Method of manufacturing photocell |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6355790B2 (en) | 1988-11-04 |
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