JPS57126173A - Solar cell - Google Patents
Solar cellInfo
- Publication number
- JPS57126173A JPS57126173A JP56010733A JP1073381A JPS57126173A JP S57126173 A JPS57126173 A JP S57126173A JP 56010733 A JP56010733 A JP 56010733A JP 1073381 A JP1073381 A JP 1073381A JP S57126173 A JPS57126173 A JP S57126173A
- Authority
- JP
- Japan
- Prior art keywords
- reflection preventive
- refractive index
- fluoride
- preventive film
- pentaoxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003449 preventive effect Effects 0.000 abstract 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 2
- 239000010410 layer Substances 0.000 abstract 2
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 abstract 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000002344 surface layer Substances 0.000 abstract 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000005083 Zinc sulfide Substances 0.000 abstract 1
- JOHMIDKSSWOPIK-UHFFFAOYSA-M [O-2].[OH-].O.O.O.[Ce+3] Chemical compound [O-2].[OH-].O.O.O.[Ce+3] JOHMIDKSSWOPIK-UHFFFAOYSA-M 0.000 abstract 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 abstract 1
- 229910001634 calcium fluoride Inorganic materials 0.000 abstract 1
- 229910001610 cryolite Inorganic materials 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 abstract 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 abstract 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 abstract 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 235000013024 sodium fluoride Nutrition 0.000 abstract 1
- 239000011775 sodium fluoride Substances 0.000 abstract 1
- 239000004408 titanium dioxide Substances 0.000 abstract 1
- 229910052984 zinc sulfide Inorganic materials 0.000 abstract 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Engineering & Computer Science (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To obtain the effective reflection preventive function in the wave length region covering a wide range at a solar cell in which a photovoltaic junction face and a reflection preventive film to cover thereof are provided in the surface layer part of a silicon substrate by method wherein the reflection preventive film is constituting of two layers having respectively the different refractive index. CONSTITUTION:P type impurities are made to be diffused in the surface layer part of the N type Si substrate 11 to form a P type layer, and the P-N junction to generae a photovoltage is made to be generated at the interface thereof. Then the first reflection preventive film 14 of titanium dioxide, tantalum pentaoxide, niobium pentaoxide, cerium pentaoxide, zinc sulfide, etc., having the refractive index of 2.20-3.8 is formed on the whole surface thereof, the second reflection preventive film 15 of calcium fluoride, sodium fluoride, cryolite, lithium fluoride, alminum fluoride, magnesium fluoride, etc., having the refractive index of 1.38 or less is adhered being piled up hereon, and the surface is made to have mirror condition. Accordingly the refractive index for wave length of 0.5-0.8mum having large intensity of rediating energy of sunlight can be made to low, and efficiency can be made even to about 1.5 times of the ordinary device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56010733A JPS57126173A (en) | 1981-01-29 | 1981-01-29 | Solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56010733A JPS57126173A (en) | 1981-01-29 | 1981-01-29 | Solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57126173A true JPS57126173A (en) | 1982-08-05 |
Family
ID=11758490
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56010733A Pending JPS57126173A (en) | 1981-01-29 | 1981-01-29 | Solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57126173A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2545271A1 (en) * | 1983-04-28 | 1984-11-02 | Rca Corp | IMAGE PRODUCTION DEVICE HAVING IMPROVED QUANTUM YIELD AND MANUFACTURING METHOD THEREOF |
| JP2002270879A (en) * | 2001-03-14 | 2002-09-20 | Mitsubishi Electric Corp | Semiconductor device |
| US6933436B2 (en) * | 2000-04-27 | 2005-08-23 | Konarka Austria Forschungs Und Entwicklungs Gmbh | Photovoltaic cell |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5290288A (en) * | 1976-01-19 | 1977-07-29 | Optical Coating Laboratory Inc | Silicone solar battery structure with twoolayer nonnreflective coating |
-
1981
- 1981-01-29 JP JP56010733A patent/JPS57126173A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5290288A (en) * | 1976-01-19 | 1977-07-29 | Optical Coating Laboratory Inc | Silicone solar battery structure with twoolayer nonnreflective coating |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2545271A1 (en) * | 1983-04-28 | 1984-11-02 | Rca Corp | IMAGE PRODUCTION DEVICE HAVING IMPROVED QUANTUM YIELD AND MANUFACTURING METHOD THEREOF |
| US6933436B2 (en) * | 2000-04-27 | 2005-08-23 | Konarka Austria Forschungs Und Entwicklungs Gmbh | Photovoltaic cell |
| JP2002270879A (en) * | 2001-03-14 | 2002-09-20 | Mitsubishi Electric Corp | Semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| AU735727B2 (en) | Solar cell module and manufacturing method thereof | |
| EP0112646A3 (en) | Photovoltaic device | |
| JPS57130481A (en) | Semiconductor construction element | |
| JPS56169373A (en) | Photoelectric converter | |
| ES480135A1 (en) | Solar Cells and Collector Structures Therefor | |
| JPS57126173A (en) | Solar cell | |
| JPS5763866A (en) | Solar battery module | |
| JPS57159070A (en) | Manufacture of photo electromotive force element | |
| JPS57192085A (en) | Solar cell and manufacture thereof | |
| JPS57157578A (en) | Active crystalline silicon thin film photovoltaic element | |
| JPS5694674A (en) | Thin-film solar cell | |
| JPS54101345A (en) | Electrochromic element of less reflection loss | |
| JPS544582A (en) | Photoelectric transducer | |
| JPS5791564A (en) | Solar battery | |
| JPS6449282A (en) | Integrated circuit device with built-in photodiode | |
| JPS575374A (en) | Photoelectric converter | |
| JPS57104275A (en) | Light receiving element | |
| GB2117174B (en) | Multilayer photovoltaic solar cell | |
| JPS6466974A (en) | Solar cell | |
| JPS5568681A (en) | Amorphous silicon solar battery and fabricating the same | |
| JPS57126174A (en) | Thin film solar cell | |
| MADAN | Transmissive metallic contact for amorphous silicon solar cells(Patent Application) | |
| JPS5564350A (en) | Radioactive-ray receiving face | |
| JPS56148875A (en) | Photoelectric conversion semiconductor device and manufacture thereof | |
| JPS56155576A (en) | Light-detecting element |