JPS57126161A - Integrated circuit device - Google Patents

Integrated circuit device

Info

Publication number
JPS57126161A
JPS57126161A JP1121981A JP1121981A JPS57126161A JP S57126161 A JPS57126161 A JP S57126161A JP 1121981 A JP1121981 A JP 1121981A JP 1121981 A JP1121981 A JP 1121981A JP S57126161 A JPS57126161 A JP S57126161A
Authority
JP
Japan
Prior art keywords
circuit
capacitor
output
voltage
point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1121981A
Other languages
Japanese (ja)
Inventor
Yoshinari Kitamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1121981A priority Critical patent/JPS57126161A/en
Publication of JPS57126161A publication Critical patent/JPS57126161A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To stabilize the output voltage of an IC by a method wherein a voltage dividing circuit is connected between an electric power source line and an earthing conductor, and a capacitor consisting of a depletion type MOSFET or a capacitor consisting of poly-crystalline silicon and an interlayer oxide film is provided between the output point of the voltage dividing circuit thereof and the fixed electric potential point. CONSTITUTION:A voltage dividing circuit 1 and a gate earthed amplifying circuit 3 are connected through the output point 2 of a circuit 1 to constitute an MOS type IC, and moreover a capacitor 4 is connected between an output point 2 and the fixed electric potential point in addition. In this constitution, when an input IN of the circuit 3 varies, although an output having large amplitude is generated at an output terminal OUT to apply large influence to the voltage at the output point 2 through capacitance between a gate and source, drain and between channels of an MOSFET element Q2 for amplification constituting the circuit 3, width of voltage variation is reduced because of existance of the capacitor 4 added newly. At this case, the capacitor 4 is consituted of an MOSFET, polycrystalline silicon, etc.
JP1121981A 1981-01-28 1981-01-28 Integrated circuit device Pending JPS57126161A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1121981A JPS57126161A (en) 1981-01-28 1981-01-28 Integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1121981A JPS57126161A (en) 1981-01-28 1981-01-28 Integrated circuit device

Publications (1)

Publication Number Publication Date
JPS57126161A true JPS57126161A (en) 1982-08-05

Family

ID=11771848

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1121981A Pending JPS57126161A (en) 1981-01-28 1981-01-28 Integrated circuit device

Country Status (1)

Country Link
JP (1) JPS57126161A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59107560A (en) * 1982-12-13 1984-06-21 Hitachi Ltd Semiconductor integrated circuit device
JPS6066449A (en) * 1983-09-21 1985-04-16 Seiko Epson Corp Gate array element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59107560A (en) * 1982-12-13 1984-06-21 Hitachi Ltd Semiconductor integrated circuit device
JPH058584B2 (en) * 1982-12-13 1993-02-02 Hitachi Ltd
JPS6066449A (en) * 1983-09-21 1985-04-16 Seiko Epson Corp Gate array element

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