JPS57126139A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57126139A
JPS57126139A JP1138281A JP1138281A JPS57126139A JP S57126139 A JPS57126139 A JP S57126139A JP 1138281 A JP1138281 A JP 1138281A JP 1138281 A JP1138281 A JP 1138281A JP S57126139 A JPS57126139 A JP S57126139A
Authority
JP
Japan
Prior art keywords
wafer
pressure
injected
groove
movable body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1138281A
Other languages
Japanese (ja)
Inventor
Kiyobumi Hida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Home Electronics Ltd
NEC Corp
Original Assignee
NEC Home Electronics Ltd
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Home Electronics Ltd, Nippon Electric Co Ltd filed Critical NEC Home Electronics Ltd
Priority to JP1138281A priority Critical patent/JPS57126139A/en
Publication of JPS57126139A publication Critical patent/JPS57126139A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Abstract

PURPOSE:To divide a wafer in narrow groove width in excellent working property without polluting and deforming a chip by cutting and separating the wafer by injecting a high-pressure liquid having a small diameter along a section between a device in the wafer and washing the wafer by injecting a low-pressure liquid having a large diameter. CONSTITUTION:The wafer 1 is fixed onto a stage 15, pure water, etc. sent by pressure by means of a pump 19 from a tank 18 are injected by means of an injection nozzle 16, a groove 20 is formed, and the wafer ais divided. The nozzle 16 is shaped in structure with an opening 163 at the lower end of a circular cavity 162 formed into a body such as a main body 161. A movable body 164, the upper surface thereof has a tapered surface 165 and the center thereof has a hole with a several mum-several dozen mum diameter, is upward pushed by means of springs 168 and housed in the cavity. When the high-pressure liquid is supplied, the movable body is downwardly pushed, and a jet water current (100kg/cm<2> or higher in pressure) regulated by the hole 166 is injected. After the relative position of the nozzle 16 is moved and the desired groove 20 is formed, pressure is dropped and the movable body is pushed up, a shower water current with an approximately several cm diameter is injected to the wafer from the opening 163, and Si chips, etc. in the groove are removed and washed.
JP1138281A 1981-01-27 1981-01-27 Manufacture of semiconductor device Pending JPS57126139A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1138281A JPS57126139A (en) 1981-01-27 1981-01-27 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1138281A JPS57126139A (en) 1981-01-27 1981-01-27 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57126139A true JPS57126139A (en) 1982-08-05

Family

ID=11776453

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1138281A Pending JPS57126139A (en) 1981-01-27 1981-01-27 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57126139A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0860732A1 (en) * 1997-02-19 1998-08-26 Asulab S.A. Manufacturing process of electrooptic cells, in particular comprising liquid crystals, or photovoltaic electrochemical cells
JP2016510954A (en) * 2013-03-15 2016-04-11 オラクル・インターナショナル・コーポレイション Multi-chip module with self-embedded positive features
JP2016157722A (en) * 2015-02-23 2016-09-01 株式会社ディスコ Cutting device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0860732A1 (en) * 1997-02-19 1998-08-26 Asulab S.A. Manufacturing process of electrooptic cells, in particular comprising liquid crystals, or photovoltaic electrochemical cells
US6066018A (en) * 1997-02-19 2000-05-23 Asulab S.A. Method for manufacturing electro-optic cells, in particular liquid crystal cells, or electrochemical photovoltaic cells
JP2016510954A (en) * 2013-03-15 2016-04-11 オラクル・インターナショナル・コーポレイション Multi-chip module with self-embedded positive features
JP2016157722A (en) * 2015-02-23 2016-09-01 株式会社ディスコ Cutting device

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