JPS5712520A - Dividing method of figure by exposing in electron beam radiation - Google Patents

Dividing method of figure by exposing in electron beam radiation

Info

Publication number
JPS5712520A
JPS5712520A JP8583480A JP8583480A JPS5712520A JP S5712520 A JPS5712520 A JP S5712520A JP 8583480 A JP8583480 A JP 8583480A JP 8583480 A JP8583480 A JP 8583480A JP S5712520 A JPS5712520 A JP S5712520A
Authority
JP
Japan
Prior art keywords
pattern
dividing
electron beam
exposing
courses
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8583480A
Other languages
Japanese (ja)
Other versions
JPS631744B2 (en
Inventor
Kazuhiko Komatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP8583480A priority Critical patent/JPS5712520A/en
Publication of JPS5712520A publication Critical patent/JPS5712520A/en
Publication of JPS631744B2 publication Critical patent/JPS631744B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To improve productivity and quality of pattern, in the case of presence of a side which is shorter than the minimum tolerable length of unit side of a figure to be drawn, by forming a dividing course by extending this short side. CONSTITUTION:When forming a pattern using electron beam, a figure pattern to be formed is divided into a basic figure of rectangular or trapezoidal shape, etc. or into a drawing unit fugure. At this time, if any one of the sides constituting a figure pattern proved to be shorter than the minimum tolerable length epsilon as unit side of a figure to be drawn, this short side is extended to provide dividing courses AB, BD and DF, etc., and the figure pattern to be formed is divided by the dividing courses. It is possible, by doing so, to reduce number of electronic beam shorts, improve productivity, equalize the beam area and quality of pattern.
JP8583480A 1980-06-26 1980-06-26 Dividing method of figure by exposing in electron beam radiation Granted JPS5712520A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8583480A JPS5712520A (en) 1980-06-26 1980-06-26 Dividing method of figure by exposing in electron beam radiation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8583480A JPS5712520A (en) 1980-06-26 1980-06-26 Dividing method of figure by exposing in electron beam radiation

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP24083486A Division JPS62162329A (en) 1986-10-09 1986-10-09 Pattern dividing method for electron beam exposure

Publications (2)

Publication Number Publication Date
JPS5712520A true JPS5712520A (en) 1982-01-22
JPS631744B2 JPS631744B2 (en) 1988-01-13

Family

ID=13869878

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8583480A Granted JPS5712520A (en) 1980-06-26 1980-06-26 Dividing method of figure by exposing in electron beam radiation

Country Status (1)

Country Link
JP (1) JPS5712520A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57204125A (en) * 1981-06-10 1982-12-14 Hitachi Ltd Electron-ray drawing device
JPS5928336A (en) * 1982-08-09 1984-02-15 Nippon Telegr & Teleph Corp <Ntt> Pattern forming method
EP0110042A2 (en) * 1982-11-03 1984-06-13 International Business Machines Corporation Electron beam lithograph proximity correction method
JPS60196939A (en) * 1984-03-19 1985-10-05 Fujitsu Ltd Charged particle beam exposure
JPS61171123A (en) * 1985-01-25 1986-08-01 Fujitsu Ltd Charged particle beam exposure method
JPS62273719A (en) * 1986-05-22 1987-11-27 Toshiba Corp Data verification in charged particle beam exposure equipment
US4878177A (en) * 1987-02-16 1989-10-31 Kabushiki Kaisha Toshiba Method for drawing a desired circuit pattern using charged particle beam
US5812412A (en) * 1995-04-28 1998-09-22 Mitsubishi Denki Kabushiki Kaisha Charged beam pattern data generating method and a charged beam pattern data generating apparatus

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57204125A (en) * 1981-06-10 1982-12-14 Hitachi Ltd Electron-ray drawing device
JPS6239818B2 (en) * 1981-06-10 1987-08-25 Hitachi Seisakusho Kk
JPS5928336A (en) * 1982-08-09 1984-02-15 Nippon Telegr & Teleph Corp <Ntt> Pattern forming method
EP0110042A2 (en) * 1982-11-03 1984-06-13 International Business Machines Corporation Electron beam lithograph proximity correction method
US4520269A (en) * 1982-11-03 1985-05-28 International Business Machines Corporation Electron beam lithography proximity correction method
JPS60196939A (en) * 1984-03-19 1985-10-05 Fujitsu Ltd Charged particle beam exposure
JPS61171123A (en) * 1985-01-25 1986-08-01 Fujitsu Ltd Charged particle beam exposure method
JPH0586849B2 (en) * 1985-01-25 1993-12-14 Fujitsu Ltd
JPS62273719A (en) * 1986-05-22 1987-11-27 Toshiba Corp Data verification in charged particle beam exposure equipment
US4878177A (en) * 1987-02-16 1989-10-31 Kabushiki Kaisha Toshiba Method for drawing a desired circuit pattern using charged particle beam
US5812412A (en) * 1995-04-28 1998-09-22 Mitsubishi Denki Kabushiki Kaisha Charged beam pattern data generating method and a charged beam pattern data generating apparatus

Also Published As

Publication number Publication date
JPS631744B2 (en) 1988-01-13

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