JPS57117271A - Semiconductor memory unit - Google Patents
Semiconductor memory unitInfo
- Publication number
- JPS57117271A JPS57117271A JP56003665A JP366581A JPS57117271A JP S57117271 A JPS57117271 A JP S57117271A JP 56003665 A JP56003665 A JP 56003665A JP 366581 A JP366581 A JP 366581A JP S57117271 A JPS57117271 A JP S57117271A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- bit line
- semiconductor substrate
- junction
- neighborhood
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000012535 impurity Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 238000009792 diffusion process Methods 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- -1 phosphorus ions Chemical class 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Static Random-Access Memory (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To reduce junction capacitance to be generated between a diffusion layer and a semiconductor substrate avoiding to increase the resistivity of the diffusion layer be a method wherein concentration of impurities of a bit line is made to be reduced only at the neighborhood of the junction part between an impurity layer and the semiconductor substrate. CONSTITUTION:The surface of P type silicon substrate 1 is oxidized, a thin oxide film is formed on the desired bit line region, and a thick field oxide film is formed on an insulating field region. The thin oxide film on the place to form the bit line region is etched, and arsenic and phosphorus ions are implanted therein. By applying heat treatment at 1,000 deg.C for about one hour and half, for example, N type impurity ions are made to be diffused in the semiconductor substrate still more deeply. Accordingly concentration of N type impurities at the neighborhood of the junction face becomes small, and junction capacitance can be made small.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56003665A JPS57117271A (en) | 1981-01-12 | 1981-01-12 | Semiconductor memory unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56003665A JPS57117271A (en) | 1981-01-12 | 1981-01-12 | Semiconductor memory unit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57117271A true JPS57117271A (en) | 1982-07-21 |
Family
ID=11563729
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56003665A Pending JPS57117271A (en) | 1981-01-12 | 1981-01-12 | Semiconductor memory unit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57117271A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5030484A (en) * | 1973-07-18 | 1975-03-26 | ||
| JPS5390888A (en) * | 1977-01-21 | 1978-08-10 | Nec Corp | Integrated circuit device |
-
1981
- 1981-01-12 JP JP56003665A patent/JPS57117271A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5030484A (en) * | 1973-07-18 | 1975-03-26 | ||
| JPS5390888A (en) * | 1977-01-21 | 1978-08-10 | Nec Corp | Integrated circuit device |
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