JPS57114238A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57114238A
JPS57114238A JP47681A JP47681A JPS57114238A JP S57114238 A JPS57114238 A JP S57114238A JP 47681 A JP47681 A JP 47681A JP 47681 A JP47681 A JP 47681A JP S57114238 A JPS57114238 A JP S57114238A
Authority
JP
Japan
Prior art keywords
substrate
electrode
semiconductor device
electric field
shielding plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP47681A
Other languages
Japanese (ja)
Inventor
Tsuneo Atsumi
Kiichi Usuki
Masafumi Miyagawa
Nobutami Oka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP47681A priority Critical patent/JPS57114238A/en
Publication of JPS57114238A publication Critical patent/JPS57114238A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To form the insulating film having a uniform thickness on the substrate of the subject semiconductor device by a method wherein the substrate and an opposing electrode are arranged in the suspension solution containing the powder consisting of an insulating material, a shielding plate is provided between the substrate and the opposing electrode, and electric field is appliedbetween them. CONSTITUTION:A semiconductor substrate 3 and a mesh electrode 4 are opposingly arranged in the isopropylalcohol suspension solution 2 containing glass powder 1, and the shielding plate 5 is provided between them. When electric field is applied to the substrate 2 and the electrode 4, the glass powder 1 charged with positive electricity normally is adhered on the surface of a cathode substrate 3, and an insulating fiml is formed. Through these procedures, the insulating film of a uniform thickness can be obtained.
JP47681A 1981-01-07 1981-01-07 Manufacture of semiconductor device Pending JPS57114238A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP47681A JPS57114238A (en) 1981-01-07 1981-01-07 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP47681A JPS57114238A (en) 1981-01-07 1981-01-07 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57114238A true JPS57114238A (en) 1982-07-16

Family

ID=11474826

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47681A Pending JPS57114238A (en) 1981-01-07 1981-01-07 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57114238A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016075787A1 (en) * 2014-11-13 2016-05-19 新電元工業株式会社 Method for manufacturing semiconductor device and glass coating forming device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016075787A1 (en) * 2014-11-13 2016-05-19 新電元工業株式会社 Method for manufacturing semiconductor device and glass coating forming device
JP6029771B2 (en) * 2014-11-13 2016-11-24 新電元工業株式会社 Semiconductor device manufacturing method and glass film forming apparatus

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