JPS57111055A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57111055A
JPS57111055A JP18838080A JP18838080A JPS57111055A JP S57111055 A JPS57111055 A JP S57111055A JP 18838080 A JP18838080 A JP 18838080A JP 18838080 A JP18838080 A JP 18838080A JP S57111055 A JPS57111055 A JP S57111055A
Authority
JP
Japan
Prior art keywords
pellet
electrodes
structural body
plasma
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18838080A
Other languages
Japanese (ja)
Inventor
Jiro Kakehi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Home Electronics Ltd
NEC Corp
Original Assignee
NEC Home Electronics Ltd
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Home Electronics Ltd, Nippon Electric Co Ltd filed Critical NEC Home Electronics Ltd
Priority to JP18838080A priority Critical patent/JPS57111055A/en
Publication of JPS57111055A publication Critical patent/JPS57111055A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To clean out adhering materials on the surface of a pellet of semiconductor device by a method wherein at least the surface of the pellet out of the pellet assembly structural body is treated with plasma dry etching. CONSTITUTION:Electrodes 17, 18 to make the pellet 13 having a P-N junction to hold ohmic contact are joined to lead out electrodes 15, 16, the other ends of the electrodes thereof are connected to slug leads 21, 22 through an Ag solder material to form the pellet assembly structural body 26, the structural body thereof is put in a plasma etching furnace, and plasma etching is performed. Accordingly plasma is made to react chemically with oxides or contaminations adhering to the exposing sides 14 of the pellet 13 or the surfaces of the lead out electrodes 15, 16 to make them voltilize, and to be exhausted to the outside of the furnace.
JP18838080A 1980-12-26 1980-12-26 Manufacture of semiconductor device Pending JPS57111055A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18838080A JPS57111055A (en) 1980-12-26 1980-12-26 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18838080A JPS57111055A (en) 1980-12-26 1980-12-26 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57111055A true JPS57111055A (en) 1982-07-10

Family

ID=16222602

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18838080A Pending JPS57111055A (en) 1980-12-26 1980-12-26 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57111055A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994022165A1 (en) * 1993-03-20 1994-09-29 Robert Bosch Gmbh Etching process and device for cleaning semiconductor components, in particular power diodes
JPH0778764A (en) * 1993-10-25 1995-03-20 Semiconductor Energy Lab Co Ltd Plasma vapor reaction method
JPH0794417A (en) * 1993-01-13 1995-04-07 Semiconductor Energy Lab Co Ltd Plasma vapor phase reactor
JPH07201764A (en) * 1994-12-26 1995-08-04 Semiconductor Energy Lab Co Ltd Plasma vapor phase reaction
JPH07201763A (en) * 1994-12-26 1995-08-04 Semiconductor Energy Lab Co Ltd Plasma reaction

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0794417A (en) * 1993-01-13 1995-04-07 Semiconductor Energy Lab Co Ltd Plasma vapor phase reactor
JP2648684B2 (en) * 1993-01-13 1997-09-03 株式会社 半導体エネルギー研究所 Plasma gas phase reactor
WO1994022165A1 (en) * 1993-03-20 1994-09-29 Robert Bosch Gmbh Etching process and device for cleaning semiconductor components, in particular power diodes
US5763326A (en) * 1993-03-20 1998-06-09 Robert Bosch Gmbh Etching process and device for cleaning semiconductor components, in particular power diodes
JPH0778764A (en) * 1993-10-25 1995-03-20 Semiconductor Energy Lab Co Ltd Plasma vapor reaction method
JP2670561B2 (en) * 1993-10-25 1997-10-29 株式会社 半導体エネルギー研究所 Film formation method by plasma vapor phase reaction
JPH07201764A (en) * 1994-12-26 1995-08-04 Semiconductor Energy Lab Co Ltd Plasma vapor phase reaction
JPH07201763A (en) * 1994-12-26 1995-08-04 Semiconductor Energy Lab Co Ltd Plasma reaction

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