JPS5710953A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5710953A JPS5710953A JP8700180A JP8700180A JPS5710953A JP S5710953 A JPS5710953 A JP S5710953A JP 8700180 A JP8700180 A JP 8700180A JP 8700180 A JP8700180 A JP 8700180A JP S5710953 A JPS5710953 A JP S5710953A
- Authority
- JP
- Japan
- Prior art keywords
- fluid
- porous layer
- contact
- pressure
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Abstract
PURPOSE:To obtain a pressure-contact electrode excellent in the cooling effect, by a method wherein the heat trasnferring area is increased by forming a porous layer on the surface of a heat sink which is to contact with a fluid. CONSTITUTION:A porous layer 8 is formed on the inner surface of each of grooves 6 in a heat sink 2 to pressure-contact with a semiconductor substrate. There are a large number of hollows 9 in said porous layer 8, and they are filled with a fluid 10. Steam in each hollow 9 becomes a bubble nucleus, and the points where bubbles have been generated are supplied with a fresh fluid, so that the heat transfer rate increases. It is also possible to use a pressurizing plate 7a provided with passages 6 for the fluid 10 as a pressurizing plate 7.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8700180A JPS5710953A (en) | 1980-06-23 | 1980-06-23 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8700180A JPS5710953A (en) | 1980-06-23 | 1980-06-23 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5710953A true JPS5710953A (en) | 1982-01-20 |
JPS6250983B2 JPS6250983B2 (en) | 1987-10-28 |
Family
ID=13902636
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8700180A Granted JPS5710953A (en) | 1980-06-23 | 1980-06-23 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5710953A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6221591U (en) * | 1985-07-23 | 1987-02-09 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0518156Y2 (en) * | 1987-07-08 | 1993-05-14 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5265341A (en) * | 1975-11-27 | 1977-05-30 | Mitsubishi Electric Corp | Heat radiation body |
JPS5373654A (en) * | 1976-12-13 | 1978-06-30 | Toshiba Corp | Heat radiating panel |
-
1980
- 1980-06-23 JP JP8700180A patent/JPS5710953A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5265341A (en) * | 1975-11-27 | 1977-05-30 | Mitsubishi Electric Corp | Heat radiation body |
JPS5373654A (en) * | 1976-12-13 | 1978-06-30 | Toshiba Corp | Heat radiating panel |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6221591U (en) * | 1985-07-23 | 1987-02-09 | ||
JPH0334951Y2 (en) * | 1985-07-23 | 1991-07-24 |
Also Published As
Publication number | Publication date |
---|---|
JPS6250983B2 (en) | 1987-10-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69901548D1 (en) | PLATE HEAT EXCHANGER WITH THREE CIRCUITS | |
CA2018016A1 (en) | Method and apparatus for controlling the heat transfer of liquid coolant in continuous casting | |
JPS5710953A (en) | Semiconductor device | |
GB1311232A (en) | Heat exchanger | |
JPS57207795A (en) | Total heat exchanging element | |
JPS5797616A (en) | Base plate for vacuum equipment | |
JPS5754352A (en) | Vapor cooling device | |
JPS56127791A (en) | Surface treatment of heat radiating body | |
JPS5796557A (en) | Cooling supporting base for semiconductor substrate | |
JPS55130781A (en) | Liquid injecting recorder | |
JPS57179590A (en) | Heat accumulating device | |
JPS52152870A (en) | Equipment for gas-liquid contact | |
JPS5784993A (en) | Boiling heat transfer material | |
JPS5575907A (en) | Plate type ozonizer | |
JPS55152397A (en) | Plate type heat exchanger | |
JPS54126932A (en) | Water-cooled flat type semiconductor stack | |
JPS6412561A (en) | Application of heat transfer compound | |
JPS6428944A (en) | Cooling structure of integrated circuit | |
JPS5447156A (en) | Heat exchanger | |
JPS52143964A (en) | Equipment for freezing and thawing | |
SU572637A1 (en) | Method of cooling liquid and device for performing same | |
JPS53138677A (en) | Vapor cooling type semiconductor device | |
JPS5227391A (en) | Contact forming method of semiconductor device | |
SU1168636A1 (en) | Method of liquid etching of semiconductor waffers | |
JPS56155397A (en) | Heat conductive surface |