JPS57106231A - Gate circuit for gate turn-off thyristor - Google Patents

Gate circuit for gate turn-off thyristor

Info

Publication number
JPS57106231A
JPS57106231A JP55183110A JP18311080A JPS57106231A JP S57106231 A JPS57106231 A JP S57106231A JP 55183110 A JP55183110 A JP 55183110A JP 18311080 A JP18311080 A JP 18311080A JP S57106231 A JPS57106231 A JP S57106231A
Authority
JP
Japan
Prior art keywords
turn
gate
gate circuit
resistance
trigger signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55183110A
Other languages
Japanese (ja)
Inventor
Shunichi Yuya
Yoshitaka Ono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP55183110A priority Critical patent/JPS57106231A/en
Publication of JPS57106231A publication Critical patent/JPS57106231A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for dc voltages or currents

Landscapes

  • Power Conversion In General (AREA)
  • Thyristor Switches And Gates (AREA)

Abstract

PURPOSE:To reduce the duty of a pulse transformer for supplying a trigger signal, by connecting a resistance in parallel to a transistor by which obtaines a gate current for turning off a GTO and by flowing the gate current after turn- off through this resistance. CONSTITUTION:A turn-on gate circuit 2 and a turn-off gate circuit 3 are connected to a GTO1. A trigger signal VP2 is supplied from a pulse transformer to a transistor TR21 of the turn-on gate circuit 2. A resistance 5 for by-pass is connected in parallel between the collector and the emitter of a TR31 of the turn-off gate circuit 3. A trigger signal VP3 is given from the pulse transformer to the base of the TR31. When the trigger signal VP3 is applied, the TR31 becomes conductive, and a capacitor 32 is discharged to turn off the GTO1. The conduction time of the TR31 is the turn-off time, and a current from a power source 33 is flowed to the resistance 5 in the reverse bias time to reduce the duty of the pulse transformer.
JP55183110A 1980-12-23 1980-12-23 Gate circuit for gate turn-off thyristor Pending JPS57106231A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55183110A JPS57106231A (en) 1980-12-23 1980-12-23 Gate circuit for gate turn-off thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55183110A JPS57106231A (en) 1980-12-23 1980-12-23 Gate circuit for gate turn-off thyristor

Publications (1)

Publication Number Publication Date
JPS57106231A true JPS57106231A (en) 1982-07-02

Family

ID=16129943

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55183110A Pending JPS57106231A (en) 1980-12-23 1980-12-23 Gate circuit for gate turn-off thyristor

Country Status (1)

Country Link
JP (1) JPS57106231A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60116A (en) * 1983-06-15 1985-01-05 Fuji Electric Co Ltd Gate driving circuit of gate turn-off thyristor
WO2016124104A1 (en) * 2015-02-05 2016-08-11 国家电网公司 Hybrid trigger circuit suitable for thyristor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60116A (en) * 1983-06-15 1985-01-05 Fuji Electric Co Ltd Gate driving circuit of gate turn-off thyristor
WO2016124104A1 (en) * 2015-02-05 2016-08-11 国家电网公司 Hybrid trigger circuit suitable for thyristor
CN105991003A (en) * 2015-02-05 2016-10-05 国家电网公司 Hybrid trigger circuit suitable for thyristor

Similar Documents

Publication Publication Date Title
US3944854A (en) Light-emitting diode connected to a coil
JPS56145775A (en) Switching control type power source circuit
JPS5545274A (en) Gate circuit of gate turn-off thyristor
JPS57106231A (en) Gate circuit for gate turn-off thyristor
US4492881A (en) Stored charge inverter circuit
EP0062651A4 (en) Dc-to-dc converters.
JPS5286049A (en) Semiconductor switch
GB1517545A (en) Semiconductor switching circuits
JPS5775032A (en) Gate circuit for gate turn-off thyristor
EP0146479A3 (en) Method and apparatus for reducing the storage time in a saturated transistor
JPS57129177A (en) Transistor inverter
JPS57186834A (en) Gate circuit of gate turn-off thyristor
JPS57203331A (en) Gate controlling circuit of gate turn-off thyristor
JPS5684033A (en) Gate circuit of gate turn-off thyristor
JPS5748829A (en) Semiconductor switch circuit
JPS56110476A (en) Turn off circuit for gate turn off thyristor
GB1279549A (en) A self-excited inverter
JPS5780274A (en) Control circuit for field-effect transistor
SU1436217A1 (en) Device for controlling a thyristor gate
JPS6458426A (en) Electric power source device for electric discharge machining
JPS5745722A (en) High-speed turn-off circuit for semiconductor switch element
JPS57192130A (en) Gate circuit for gto thyristor
JPS5583463A (en) Power supply
JPS5585140A (en) Semiconductor dc current switch circuit
FR2437727A1 (en) Switch=off circuit for thyristor - has gate-turn-off thyristor in series with switch-off voltage source across thyristor and controlled by semiconductors (NL 1.4.80)