JPS5710283A - Semiconductor memory - Google Patents

Semiconductor memory

Info

Publication number: JPS5710283A
Authority: JP; Japan
Prior art keywords: semiconductor memory; semiconductor; memory
Prior art date: 1980-05-16
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP7337081A

Other languages

Japanese (ja)

Inventor

Iritsuchi Erinson Morudeyuku

Raimudozanobuitsuchi Ma Marato

Arekuseebuitsuchi Marah Borisu

Iwanobuitsuchi Pokaru Buadeimu

Anatoriebuitsuchi Tere Serugei

Uradeimirobuitsuchi Su Genriku

Georugiebuitsuchi Tes Buitarii

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

OORUDENA TOURUDOOBOBO KURASUNO

Original Assignee

OORUDENA TOURUDOOBOBO KURASUNO

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1980-05-16

Filing date

1981-05-15

Publication date

1982-01-19

1981-05-15 Application filed by OORUDENA TOURUDOOBOBO KURASUNO filed Critical OORUDENA TOURUDOOBOBO KURASUNO

1982-01-19 Publication of JPS5710283A publication Critical patent/JPS5710283A/en

Status Pending legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title 1

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8615—Hi-lo semiconductor devices, e.g. memory devices

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Ceramic Engineering (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Semiconductor Memories (AREA)
Read Only Memory (AREA)
Non-Volatile Memory (AREA)

JP7337081A 1980-05-16 1981-05-15 Semiconductor memory Pending JPS5710283A (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
SU802917351A SU1005223A1 (en)	1980-05-16	1980-05-16	Semiconductor storage device

Publications (1)

Publication Number	Publication Date
JPS5710283A true JPS5710283A (en)	1982-01-19

Family

ID=20892813

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP7337081A Pending JPS5710283A (en)	1980-05-16	1981-05-15	Semiconductor memory

Country Status (5)

Country	Link
JP (1)	JPS5710283A (en)
DE (1)	DE3118799A1 (en)
FR (1)	FR2482785A1 (en)
IT (1)	IT8121754A0 (en)
SU (1)	SU1005223A1 (en)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
BE633151A (en) *	1962-06-01
BE756782A (en) *	1969-10-03	1971-03-01	Western Electric Co	MEMORY BODY HAVING A STRUCTURE CONTAINING TWO INSULATING LAYERS BETWEEN A SEMICONDUCTOR AND A METAL LAYER
FR2095305B1 (en) *	1970-06-17	1976-03-19	Ibm
US3670218A (en) *	1971-08-02	1972-06-13	North American Rockwell	Monolithic heteroepitaxial microwave tunnel die
IT982622B (en) *	1972-06-05	1974-10-21	Ibm	PERFECTED STORAGE DEVICE
US3852796A (en) *	1972-06-08	1974-12-03	Ibm	GaN SWITCHING AND MEMORY DEVICES AND METHODS THEREFOR
US3979613A (en) *	1975-06-18	1976-09-07	Sperry Rand Corporation	Multi-terminal controlled-inversion semiconductor devices
US4173763A (en) *	1977-06-09	1979-11-06	International Business Machines Corporation	Heterojunction tunneling base transistor

1980
- 1980-05-16 SU SU802917351A patent/SU1005223A1/en active
1981
- 1981-05-12 DE DE3118799A patent/DE3118799A1/en not_active Withdrawn
- 1981-05-15 IT IT8121754A patent/IT8121754A0/en unknown
- 1981-05-15 FR FR8109768A patent/FR2482785A1/en active Granted
- 1981-05-15 JP JP7337081A patent/JPS5710283A/en active Pending

Also Published As

Publication number	Publication date
FR2482785A1 (en)	1981-11-20
DE3118799A1 (en)	1982-03-18
FR2482785B1 (en)	1984-08-17
SU1005223A1 (en)	1983-03-15
IT8121754A0 (en)	1981-05-15

Publication	Publication Date	Title
JPS5780761A (en)	1982-05-20	Semiconductor memory
DE3171836D1 (en)	1985-09-19	Semiconductor memory device
GB2070372B (en)	1983-09-28	Semiconductor memory device
EP0055451A3 (en)	1984-03-28	Semiconductor memory device
EP0055129A3 (en)	1984-07-04	Semiconductor memory device
DE3175782D1 (en)	1987-02-05	Semiconductor memory device
MY8600543A (en)	1986-12-31	Semiconductor memory device
DE3174417D1 (en)	1986-05-22	Semiconductor memory device
DE3168790D1 (en)	1985-03-21	Semiconductor memory device
DE3175508D1 (en)	1986-11-27	Semiconductor memory device
IE812483L (en)	1982-04-22	Semiconductor memory device
DE3175431D1 (en)	1986-11-06	Semiconductor memory device
DE3176842D1 (en)	1988-09-15	Semiconductor memory device
DE3172401D1 (en)	1985-10-31	Semiconductor memory device
DE3175777D1 (en)	1987-02-05	Semiconductor memory device
DE3173413D1 (en)	1986-02-20	Semiconductor memory device
GB2090494B (en)	1984-09-05	Semiconductor memory device
GB2087647B (en)	1984-10-03	Semiconductor memory manufacture
DE3175419D1 (en)	1986-11-06	Semiconductor memory
DE3170914D1 (en)	1985-07-18	Semiconductor memory device
DE3175320D1 (en)	1986-10-23	Semiconductor memory device
DE3176211D1 (en)	1987-06-25	Semiconductor memory device
JPS5764391A (en)	1982-04-19	Semiconductor memory
GB2070329B (en)	1983-10-26	Semiconductor memory device
GB2087646B (en)	1984-06-13	Semiconductor memory manufacture