JPS5710283A - Semiconductor memory - Google Patents
Semiconductor memoryInfo
- Publication number
- JPS5710283A JPS5710283A JP7337081A JP7337081A JPS5710283A JP S5710283 A JPS5710283 A JP S5710283A JP 7337081 A JP7337081 A JP 7337081A JP 7337081 A JP7337081 A JP 7337081A JP S5710283 A JPS5710283 A JP S5710283A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor memory
- semiconductor
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8615—Hi-lo semiconductor devices, e.g. memory devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU802917351A SU1005223A1 (en) | 1980-05-16 | 1980-05-16 | Semiconductor storage device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5710283A true JPS5710283A (en) | 1982-01-19 |
Family
ID=20892813
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7337081A Pending JPS5710283A (en) | 1980-05-16 | 1981-05-15 | Semiconductor memory |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS5710283A (en) |
DE (1) | DE3118799A1 (en) |
FR (1) | FR2482785A1 (en) |
IT (1) | IT8121754A0 (en) |
SU (1) | SU1005223A1 (en) |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE633151A (en) * | 1962-06-01 | |||
BE756782A (en) * | 1969-10-03 | 1971-03-01 | Western Electric Co | MEMORY BODY HAVING A STRUCTURE CONTAINING TWO INSULATING LAYERS BETWEEN A SEMICONDUCTOR AND A METAL LAYER |
FR2095305B1 (en) * | 1970-06-17 | 1976-03-19 | Ibm | |
US3670218A (en) * | 1971-08-02 | 1972-06-13 | North American Rockwell | Monolithic heteroepitaxial microwave tunnel die |
IT982622B (en) * | 1972-06-05 | 1974-10-21 | Ibm | PERFECTED STORAGE DEVICE |
US3852796A (en) * | 1972-06-08 | 1974-12-03 | Ibm | GaN SWITCHING AND MEMORY DEVICES AND METHODS THEREFOR |
US3979613A (en) * | 1975-06-18 | 1976-09-07 | Sperry Rand Corporation | Multi-terminal controlled-inversion semiconductor devices |
US4173763A (en) * | 1977-06-09 | 1979-11-06 | International Business Machines Corporation | Heterojunction tunneling base transistor |
-
1980
- 1980-05-16 SU SU802917351A patent/SU1005223A1/en active
-
1981
- 1981-05-12 DE DE3118799A patent/DE3118799A1/en not_active Withdrawn
- 1981-05-15 IT IT8121754A patent/IT8121754A0/en unknown
- 1981-05-15 FR FR8109768A patent/FR2482785A1/en active Granted
- 1981-05-15 JP JP7337081A patent/JPS5710283A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
FR2482785A1 (en) | 1981-11-20 |
DE3118799A1 (en) | 1982-03-18 |
FR2482785B1 (en) | 1984-08-17 |
SU1005223A1 (en) | 1983-03-15 |
IT8121754A0 (en) | 1981-05-15 |
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