IE812483L - Semiconductor memory device - Google Patents
Semiconductor memory deviceInfo
- Publication number
- IE812483L IE812483L IE812483A IE248381A IE812483L IE 812483 L IE812483 L IE 812483L IE 812483 A IE812483 A IE 812483A IE 248381 A IE248381 A IE 248381A IE 812483 L IE812483 L IE 812483L
- Authority
- IE
- Ireland
- Prior art keywords
- memory device
- semiconductor memory
- semiconductor
- memory
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4094—Bit-line management or control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4099—Dummy cell treatment; Reference voltage generators
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55147771A JPS5771579A (en) | 1980-10-22 | 1980-10-22 | Semiconductor memory device |
JP55147773A JPS5771580A (en) | 1980-10-22 | 1980-10-22 | Semiconductor memory device |
Publications (2)
Publication Number | Publication Date |
---|---|
IE812483L true IE812483L (en) | 1982-04-22 |
IE53512B1 IE53512B1 (en) | 1988-12-07 |
Family
ID=26478221
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IE2483/81A IE53512B1 (en) | 1980-10-22 | 1981-10-22 | Semiconductor memory circuit |
Country Status (4)
Country | Link |
---|---|
US (1) | US4458336A (en) |
EP (1) | EP0050529B1 (en) |
DE (2) | DE3177221D1 (en) |
IE (1) | IE53512B1 (en) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4617652A (en) * | 1979-01-24 | 1986-10-14 | Xicor, Inc. | Integrated high voltage distribution and control systems |
JPS58121195A (en) * | 1982-01-13 | 1983-07-19 | Nec Corp | Producing circuit of precharging signal |
JPH0612619B2 (en) * | 1982-09-22 | 1994-02-16 | 株式会社日立製作所 | Semiconductor memory device |
JPS59121691A (en) * | 1982-12-01 | 1984-07-13 | Fujitsu Ltd | Dynamic type semiconductor storage device |
US4584672A (en) * | 1984-02-22 | 1986-04-22 | Intel Corporation | CMOS dynamic random-access memory with active cycle one half power supply potential bit line precharge |
US4658382A (en) * | 1984-07-11 | 1987-04-14 | Texas Instruments Incorporated | Dynamic memory with improved dummy cell circuitry |
JPS6134619A (en) * | 1984-07-26 | 1986-02-18 | Mitsubishi Electric Corp | Mos transistor circuit |
JPS61158095A (en) * | 1984-12-28 | 1986-07-17 | Toshiba Corp | Bit line precharge circuit of dynamic memory |
JPS61276198A (en) * | 1985-04-26 | 1986-12-06 | アドバンスト・マイクロ・デイバイシズ・インコ−ポレ−テツド | Cmos memory bias system |
JPH01171194A (en) * | 1987-12-25 | 1989-07-06 | Nec Ic Microcomput Syst Ltd | Semiconductor memory device |
US5687109A (en) * | 1988-05-31 | 1997-11-11 | Micron Technology, Inc. | Integrated circuit module having on-chip surge capacitors |
JPH0814995B2 (en) * | 1989-01-27 | 1996-02-14 | 株式会社東芝 | Semiconductor memory |
GB9007787D0 (en) * | 1990-04-06 | 1990-06-06 | Foss Richard C | High-speed,small-swing datapath for dram |
JPH05342873A (en) * | 1992-06-10 | 1993-12-24 | Nec Corp | Semiconductor storage device |
JP3253745B2 (en) * | 1993-04-28 | 2002-02-04 | 富士通株式会社 | Semiconductor storage device |
KR100214462B1 (en) * | 1995-11-27 | 1999-08-02 | 구본준 | Memory cell writing method |
US7145819B2 (en) * | 2001-06-11 | 2006-12-05 | Analog Devices, Inc. | Method and apparatus for integrated circuit with DRAM |
US9786345B1 (en) * | 2016-09-16 | 2017-10-10 | Micron Technology, Inc. | Compensation for threshold voltage variation of memory cell components |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4004284A (en) * | 1975-03-05 | 1977-01-18 | Teletype Corporation | Binary voltage-differential sensing circuits, and sense/refresh amplifier circuits for random-access memories |
US4045783A (en) * | 1976-04-12 | 1977-08-30 | Standard Microsystems Corporation | Mos one transistor cell ram having divided and balanced bit lines, coupled by regenerative flip-flop sense amplifiers, and balanced access circuitry |
JPS54101230A (en) * | 1978-01-26 | 1979-08-09 | Nec Corp | Dynamic mos memory circuit |
US4195357A (en) * | 1978-06-15 | 1980-03-25 | Texas Instruments Incorporated | Median spaced dummy cell layout for MOS random access memory |
US4291393A (en) * | 1980-02-11 | 1981-09-22 | Mostek Corporation | Active refresh circuit for dynamic MOS circuits |
-
1981
- 1981-10-21 US US06/313,616 patent/US4458336A/en not_active Expired - Lifetime
- 1981-10-22 DE DE8787104318T patent/DE3177221D1/en not_active Expired - Lifetime
- 1981-10-22 DE DE8181304967T patent/DE3176601D1/en not_active Expired
- 1981-10-22 EP EP81304967A patent/EP0050529B1/en not_active Expired
- 1981-10-22 IE IE2483/81A patent/IE53512B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0050529A3 (en) | 1984-10-10 |
DE3177221D1 (en) | 1990-11-15 |
DE3176601D1 (en) | 1988-02-11 |
US4458336A (en) | 1984-07-03 |
EP0050529B1 (en) | 1988-01-07 |
IE53512B1 (en) | 1988-12-07 |
EP0050529A2 (en) | 1982-04-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK9A | Patent expired |