JPS5688353A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5688353A
JPS5688353A JP16594379A JP16594379A JPS5688353A JP S5688353 A JPS5688353 A JP S5688353A JP 16594379 A JP16594379 A JP 16594379A JP 16594379 A JP16594379 A JP 16594379A JP S5688353 A JPS5688353 A JP S5688353A
Authority
JP
Japan
Prior art keywords
pads
input
protecting circuit
mos device
pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16594379A
Other languages
Japanese (ja)
Other versions
JPS6355219B2 (en
Inventor
Shinichi Kunieda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP16594379A priority Critical patent/JPS5688353A/en
Publication of JPS5688353A publication Critical patent/JPS5688353A/en
Publication of JPS6355219B2 publication Critical patent/JPS6355219B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To effectively protect the gate insulation of an MOS device against a breakdown in a protecting circuit connected to the MOS semiconductor device by specifying the mutual intervals of diffused layers connected to three input pads. CONSTITUTION:The input pads 30, 40, 50 for connecting the MOS device onto a semiconductor substrate are aligned thereon, a diffused layer 31 is connected to the pad 30, and is connected through an input protecting circuit 32 to a wire 34 reaching the internal circuit of the MOS device. Similarly, a diffused layer 41 is connected to the pad 40, is connected through an input protecting circuit 42 to a wire 44, the pad 50 is connected through a diffused layer 53 and an input protecting circuit 52 to a wire 54. In this configuration the diffused layers 31, 41 of the pads 30, 40 are confronted with small interval therebetween, the diffused layers 41, 51 of the pads 40, 50 are directed reversely with large interval therebetween. When high voltage is applied to the pads, a breakdown occurs at the portion having small interval and the MOS device can be thus safely secured.
JP16594379A 1979-12-20 1979-12-20 Semiconductor device Granted JPS5688353A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16594379A JPS5688353A (en) 1979-12-20 1979-12-20 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16594379A JPS5688353A (en) 1979-12-20 1979-12-20 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5688353A true JPS5688353A (en) 1981-07-17
JPS6355219B2 JPS6355219B2 (en) 1988-11-01

Family

ID=15821957

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16594379A Granted JPS5688353A (en) 1979-12-20 1979-12-20 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5688353A (en)

Also Published As

Publication number Publication date
JPS6355219B2 (en) 1988-11-01

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