JPS5687377A - Photoinformation reading element - Google Patents

Photoinformation reading element

Info

Publication number
JPS5687377A
JPS5687377A JP16422479A JP16422479A JPS5687377A JP S5687377 A JPS5687377 A JP S5687377A JP 16422479 A JP16422479 A JP 16422479A JP 16422479 A JP16422479 A JP 16422479A JP S5687377 A JPS5687377 A JP S5687377A
Authority
JP
Japan
Prior art keywords
photosensors
thin film
film
inclines
incident light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16422479A
Other languages
Japanese (ja)
Inventor
Koji Mori
Hideo Segawa
Koichi Sakurai
Masakuni Itagaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP16422479A priority Critical patent/JPS5687377A/en
Publication of JPS5687377A publication Critical patent/JPS5687377A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)

Abstract

PURPOSE:To raise the utilization factor of incident light by arranging a plurality of thin film photosensors at the inclines of a V-shaped groove(s) provided on a substrate. CONSTITUTION:One or plural V-shaped grooves 2 are provided on a substrate 1 such as glass, ceramic or the like and a plurality of thin film photosensors 3 are provided at the inclines of the groove(s) 2. The photosensors 3 are constituted by evaporating the first electrode film 4, a photoconductive film 5 and the second electrode film 6 and by stacking them in order by sputtering or the like. The hetero junction of a II-IV group compound such as CdS-CdTe or the like and the substance of amorphous chalcogenites such as SnO2-As.Se.Te or the like are used as the film 5. In this way, the utilization factor of incident light is increased by widening a carrier growth region. It may also be possible to provide the thin film photosensors at one side of the inclines of the groove and install a metal thin film feeding light to the photosensors by reflecting the incident light at the other incline.
JP16422479A 1979-12-18 1979-12-18 Photoinformation reading element Pending JPS5687377A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16422479A JPS5687377A (en) 1979-12-18 1979-12-18 Photoinformation reading element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16422479A JPS5687377A (en) 1979-12-18 1979-12-18 Photoinformation reading element

Publications (1)

Publication Number Publication Date
JPS5687377A true JPS5687377A (en) 1981-07-15

Family

ID=15789024

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16422479A Pending JPS5687377A (en) 1979-12-18 1979-12-18 Photoinformation reading element

Country Status (1)

Country Link
JP (1) JPS5687377A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6396044B1 (en) 1998-12-22 2002-05-28 Hiroya Ooki Image reading apparatus
GB2386250A (en) * 2002-03-08 2003-09-10 Denselight Semiconductors Pte Passive photodetector
US6636908B1 (en) 1999-06-28 2003-10-21 Sangate Systems, Inc. I/O system supporting extended functions and method therefor
US6735636B1 (en) 1999-06-28 2004-05-11 Sepaton, Inc. Device, system, and method of intelligently splitting information in an I/O system
US6782401B2 (en) 2001-07-02 2004-08-24 Sepaton, Inc. Method and apparatus for implementing a reliable open file system

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6396044B1 (en) 1998-12-22 2002-05-28 Hiroya Ooki Image reading apparatus
US6636908B1 (en) 1999-06-28 2003-10-21 Sangate Systems, Inc. I/O system supporting extended functions and method therefor
US6735636B1 (en) 1999-06-28 2004-05-11 Sepaton, Inc. Device, system, and method of intelligently splitting information in an I/O system
US6782401B2 (en) 2001-07-02 2004-08-24 Sepaton, Inc. Method and apparatus for implementing a reliable open file system
GB2386250A (en) * 2002-03-08 2003-09-10 Denselight Semiconductors Pte Passive photodetector

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