JPS568435B2 - - Google Patents

Info

Publication number
JPS568435B2
JPS568435B2 JP9437072A JP9437072A JPS568435B2 JP S568435 B2 JPS568435 B2 JP S568435B2 JP 9437072 A JP9437072 A JP 9437072A JP 9437072 A JP9437072 A JP 9437072A JP S568435 B2 JPS568435 B2 JP S568435B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP9437072A
Other versions
JPS4951833A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP9437072A priority Critical patent/JPS568435B2/ja
Priority to US00398340A priority patent/US3832699A/en
Priority to IT29121/73A priority patent/IT993310B/it
Priority to GB4401973A priority patent/GB1451363A/en
Priority to FR7333634A priority patent/FR2200582B1/fr
Priority to DE2347229A priority patent/DE2347229C3/de
Publication of JPS4951833A publication Critical patent/JPS4951833A/ja
Publication of JPS568435B2 publication Critical patent/JPS568435B2/ja
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
JP9437072A 1972-09-19 1972-09-19 Expired JPS568435B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP9437072A JPS568435B2 (ja) 1972-09-19 1972-09-19
US00398340A US3832699A (en) 1972-09-19 1973-09-18 Memory control circuit
IT29121/73A IT993310B (it) 1972-09-19 1973-09-19 Circuito per il rifornimento di cariche elettriche particolarmente per memorie di tipo dinamico
GB4401973A GB1451363A (en) 1972-09-19 1973-09-19 Memory circuits
FR7333634A FR2200582B1 (ja) 1972-09-19 1973-09-19
DE2347229A DE2347229C3 (de) 1972-09-19 1973-09-19 Schaltung zum Steuern des Adressier-, Lese-, Schreib- und Regeneriervorganges bei einem dynamischen Speicher

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9437072A JPS568435B2 (ja) 1972-09-19 1972-09-19

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP54122869A Division JPS597159B2 (ja) 1979-09-25 1979-09-25 メモリ回路

Publications (2)

Publication Number Publication Date
JPS4951833A JPS4951833A (ja) 1974-05-20
JPS568435B2 true JPS568435B2 (ja) 1981-02-24

Family

ID=14108414

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9437072A Expired JPS568435B2 (ja) 1972-09-19 1972-09-19

Country Status (6)

Country Link
US (1) US3832699A (ja)
JP (1) JPS568435B2 (ja)
DE (1) DE2347229C3 (ja)
FR (1) FR2200582B1 (ja)
GB (1) GB1451363A (ja)
IT (1) IT993310B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0318575B2 (ja) * 1980-07-28 1991-03-12 Raychem Ltd

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3964030A (en) * 1973-12-10 1976-06-15 Bell Telephone Laboratories, Incorporated Semiconductor memory array
US4133611A (en) * 1977-07-08 1979-01-09 Xerox Corporation Two-page interweaved random access memory configuration
US4231110A (en) * 1979-01-29 1980-10-28 Fairchild Camera And Instrument Corp. Memory array with sequential row and column addressing
JPS55105893A (en) * 1979-01-31 1980-08-13 Sharp Corp Driving unit of dynamic memory
US4338679A (en) * 1980-12-24 1982-07-06 Mostek Corporation Row driver circuit for semiconductor memory
EP0067992A1 (en) * 1980-12-24 1983-01-05 Mostek Corporation Row driver circuit for semiconductor memory
US4404662A (en) * 1981-07-06 1983-09-13 International Business Machines Corporation Method and circuit for accessing an integrated semiconductor memory
JPS5957525A (ja) * 1982-09-28 1984-04-03 Fujitsu Ltd Ｃｍｉｓ回路装置
GB2360113B (en) * 2000-03-08 2004-11-10 Seiko Epson Corp Dynamic random access memory
US6711052B2 (en) * 2002-06-28 2004-03-23 Motorola, Inc. Memory having a precharge circuit and method therefor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3748651A (en) * 1972-02-16 1973-07-24 Cogar Corp Refresh control for add-on semiconductor memory
US3790961A (en) * 1972-06-09 1974-02-05 Advanced Memory Syst Inc Random access dynamic semiconductor memory system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0318575B2 (ja) * 1980-07-28 1991-03-12 Raychem Ltd

Also Published As

Publication number Publication date
DE2347229B2 (de) 1978-03-23
DE2347229C3 (de) 1978-11-23
FR2200582A1 (ja) 1974-04-19
JPS4951833A (ja) 1974-05-20
FR2200582B1 (ja) 1977-10-07
IT993310B (it) 1975-09-30
DE2347229A1 (de) 1974-05-02
GB1451363A (en) 1976-09-29
US3832699A (en) 1974-08-27

Similar Documents

Publication Publication Date Title
FR2194887B3 (ja)
FR2189633B1 (ja)
JPS4949894A (ja)
JPS568435B2 (ja)
FR2200581B1 (ja)
JPS5249952B2 (ja)
JPS5246343B2 (ja)
JPS4898105A (ja)
FR2173729B1 (ja)
FR2211802B3 (ja)
JPS497073A (ja)
JPS491108A (ja)
JPS48111408U (ja)
JPS4939224U (ja)
JPS5230947B2 (ja)
JPS4977860U (ja)
JPS52445B2 (ja)
JPS48114362U (ja)
JPS4887536A (ja)
CH597282A5 (ja)
BG18199A1 (ja)
BG19400A1 (ja)
CH592926B5 (ja)
CH605839A5 (ja)
CH590913A5 (ja)