JPS5683036A - Glass passivation of mesa type semiconductor device - Google Patents

Glass passivation of mesa type semiconductor device

Info

Publication number
JPS5683036A
JPS5683036A JP16035879A JP16035879A JPS5683036A JP S5683036 A JPS5683036 A JP S5683036A JP 16035879 A JP16035879 A JP 16035879A JP 16035879 A JP16035879 A JP 16035879A JP S5683036 A JPS5683036 A JP S5683036A
Authority
JP
Japan
Prior art keywords
glass
groove
semiconductor device
type semiconductor
volume
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16035879A
Other languages
Japanese (ja)
Inventor
Junichi Oura
Torakichi Kobayashi
Masaru Shinpo
Shinichi Tai
Tsuneo Atsumi
Kiichi Usuki
Masafumi Miyagawa
Takao Emoto
Takashi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP16035879A priority Critical patent/JPS5683036A/en
Publication of JPS5683036A publication Critical patent/JPS5683036A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To prevent the generation of crack in the passivation glass and to prevent the deterioration of electric characteristic of a mesa type semiconductor device by a method wherein a groove being provided in the semiconductor substrate is buried with glass of accumulation quantity having a specified relation with the volume of the groove and is burned. CONSTITUTION:When the groove 6 is to be provided in the semiconductor substrate and is to be passivated with glass, the accumulation quantity of glass V1 is made to be less than V2/k (V2 indicates the volume of the groove 6, k indicates the changing ratio of volume by burning) and is accumulated and is burned to form the glass passivation film 7. By this way, the surface of the glass is made to be concave, crack withstanding intensity is improved, the deterioration of electric characteristic is prevented and the yield of manufacture can be elevated.
JP16035879A 1979-12-12 1979-12-12 Glass passivation of mesa type semiconductor device Pending JPS5683036A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16035879A JPS5683036A (en) 1979-12-12 1979-12-12 Glass passivation of mesa type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16035879A JPS5683036A (en) 1979-12-12 1979-12-12 Glass passivation of mesa type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5683036A true JPS5683036A (en) 1981-07-07

Family

ID=15713240

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16035879A Pending JPS5683036A (en) 1979-12-12 1979-12-12 Glass passivation of mesa type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5683036A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5741738A (en) * 1994-12-02 1998-04-21 International Business Machines Corporation Method of making corner protected shallow trench field effect transistor
US5868870A (en) * 1992-12-10 1999-02-09 Micron Technology, Inc. Isolation structure of a shallow semiconductor device trench

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5868870A (en) * 1992-12-10 1999-02-09 Micron Technology, Inc. Isolation structure of a shallow semiconductor device trench
US5741738A (en) * 1994-12-02 1998-04-21 International Business Machines Corporation Method of making corner protected shallow trench field effect transistor

Similar Documents

Publication Publication Date Title
JPS5687340A (en) Semiconductor device and manufacture thereof
JPS5727015A (en) Manufacture of silicon thin film
JPS5683036A (en) Glass passivation of mesa type semiconductor device
JPS5772369A (en) Semiconductor device building in light receiving element
JPS53145578A (en) Diode varister
JPS5411674A (en) Semiconductor device of mesa type
JPS5649576A (en) Schottky diode
JPS57184253A (en) Manufacture of indoor silicon solar cell
JPS5550629A (en) Manufacture of mesa-type semiconductor device
JPS57139971A (en) Semiconductor device with high withstand voltage
JPS5425184A (en) Light emitting element of semiconductor
JPS577963A (en) Charge transfer element
JPS51134564A (en) Metalic electrode manufacturing process
JPS57194573A (en) Photoarc thyristor
JPS5371559A (en) Manufacture of pn junction
JPS5452471A (en) Manufacture of semiconductor device
JPS5428566A (en) Manufacture of semiconductor device
JPS57112091A (en) Semiconductor luminescent device
JPS53148986A (en) Manufacture of semiconductor device
JPS5526669A (en) Manufacturing semiconductor device
JPS5658288A (en) Semiconductor device
JPS55115337A (en) Manufacture of semiconductor device
JPS5224482A (en) Semiconductor photoelectric conversion element
JPS5388591A (en) Production of light emitting diode
JPS5490974A (en) Manufacture for power transistor