JPS5666040A - Etching method of titanium film - Google Patents

Etching method of titanium film

Info

Publication number
JPS5666040A
JPS5666040A JP14346679A JP14346679A JPS5666040A JP S5666040 A JPS5666040 A JP S5666040A JP 14346679 A JP14346679 A JP 14346679A JP 14346679 A JP14346679 A JP 14346679A JP S5666040 A JPS5666040 A JP S5666040A
Authority
JP
Japan
Prior art keywords
etching
plasma
titanium film
flux
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14346679A
Other languages
Japanese (ja)
Inventor
Atsushi Endo
Toshio Yada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14346679A priority Critical patent/JPS5666040A/en
Publication of JPS5666040A publication Critical patent/JPS5666040A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas

Abstract

PURPOSE:To accurately control the volume of etching the titanium film by a method wherein Ti is first etched in the gas plasma of Ar, He, etc., and then what contains a halide. CONSTITUTION:An Ar gas is introduced into a vacuum container 1 where the flux and pressure specified are maintained. High frequency power is given 13 to electrodes 3, 5 to allow plasma to be generated in order to remove a surface oxidized film of Ti. Then, the introduction of Ar and etching are stopped. After the Ar has been discharged from the container, CF4 is introduced into it, where the flux and pressure specified are maintained, supplying high frequency power to the electrodes 3, 5 to generate plasma. A number of activated F contained in the plasma combine with Ti to etch the Ti layer. The amount of etching can be accurately controlled by the threshold power supply time because the surface oxidized film of Ti has been removed and the etching stants instantly.
JP14346679A 1979-11-05 1979-11-05 Etching method of titanium film Pending JPS5666040A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14346679A JPS5666040A (en) 1979-11-05 1979-11-05 Etching method of titanium film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14346679A JPS5666040A (en) 1979-11-05 1979-11-05 Etching method of titanium film

Publications (1)

Publication Number Publication Date
JPS5666040A true JPS5666040A (en) 1981-06-04

Family

ID=15339354

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14346679A Pending JPS5666040A (en) 1979-11-05 1979-11-05 Etching method of titanium film

Country Status (1)

Country Link
JP (1) JPS5666040A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5411631A (en) * 1992-11-11 1995-05-02 Tokyo Electron Limited Dry etching method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5411631A (en) * 1992-11-11 1995-05-02 Tokyo Electron Limited Dry etching method

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