JPS56148833A - Plasma etching method - Google Patents
Plasma etching methodInfo
- Publication number
- JPS56148833A JPS56148833A JP5236180A JP5236180A JPS56148833A JP S56148833 A JPS56148833 A JP S56148833A JP 5236180 A JP5236180 A JP 5236180A JP 5236180 A JP5236180 A JP 5236180A JP S56148833 A JPS56148833 A JP S56148833A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- gas
- chlorine
- covalence
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Abstract
PURPOSE:To enable acceleration by a method wherein a reactive gas, in which chlorine molecules or carbon atoms covalence-bond, is introduced, and a metallic silicide film having the high melting point is etched on an electrode, on which a carbon plate is placed and which is energized with high frequency. CONSTITUTION:One electrode 14 between a pair of electrodes mutually arranged oppositely is grounded, unified with a vacuum vessel 15 and used as an anode, and high-frequency power is applied from 22 and 23 employing the other electrode 13 as a cathode. Consequently, a reactive gss introduced from a gas introducing port 17 such as chlorine gas or a gas in which carbon atoms and chlorine atoms covalence-bond is activated by glow discharge, plasma is formed, and a metallic silicide film 16 having the high melting point on a carbon plate 25 pasted on the electrode 13 is etched using positive ions in the plasma positively as an etchent. Thus, etching is accelerated, and under-cuts are removed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5236180A JPS56148833A (en) | 1980-04-22 | 1980-04-22 | Plasma etching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5236180A JPS56148833A (en) | 1980-04-22 | 1980-04-22 | Plasma etching method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56148833A true JPS56148833A (en) | 1981-11-18 |
Family
ID=12912659
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5236180A Pending JPS56148833A (en) | 1980-04-22 | 1980-04-22 | Plasma etching method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56148833A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0195477A2 (en) * | 1985-03-18 | 1986-09-24 | Koninklijke Philips Electronics N.V. | Method of manufacturing a semiconductor device, in which a double layer - consisting of poly Si and a silicide - present on a layer of silicon oxide is etched in a plasma |
US5958801A (en) * | 1989-07-20 | 1999-09-28 | Micron Technology, Inc. | Anisotropic etch method |
CN110790263A (en) * | 2015-05-13 | 2020-02-14 | 储晞 | Three-dimensional graphene production method and device, composite electrode material, preparation and application |
-
1980
- 1980-04-22 JP JP5236180A patent/JPS56148833A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0195477A2 (en) * | 1985-03-18 | 1986-09-24 | Koninklijke Philips Electronics N.V. | Method of manufacturing a semiconductor device, in which a double layer - consisting of poly Si and a silicide - present on a layer of silicon oxide is etched in a plasma |
US5958801A (en) * | 1989-07-20 | 1999-09-28 | Micron Technology, Inc. | Anisotropic etch method |
US6133156A (en) * | 1989-07-20 | 2000-10-17 | Micron Technology, Inc, | Anisotropic etch method |
US6461976B1 (en) | 1989-07-20 | 2002-10-08 | Micron Technology, Inc. | Anisotropic etch method |
US6686295B2 (en) | 1989-07-20 | 2004-02-03 | Micron Technology, Inc. | Anisotropic etch method |
US7375036B2 (en) | 1989-07-20 | 2008-05-20 | Micron Technology, Inc | Anisotropic etch method |
CN110790263A (en) * | 2015-05-13 | 2020-02-14 | 储晞 | Three-dimensional graphene production method and device, composite electrode material, preparation and application |
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