JPS566483A - Double current contraction type light emiting diode - Google Patents

Double current contraction type light emiting diode

Info

Publication number
JPS566483A
JPS566483A JP8172579A JP8172579A JPS566483A JP S566483 A JPS566483 A JP S566483A JP 8172579 A JP8172579 A JP 8172579A JP 8172579 A JP8172579 A JP 8172579A JP S566483 A JPS566483 A JP S566483A
Authority
JP
Japan
Prior art keywords
current
light emitting
current contraction
contraction
contraction portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8172579A
Other languages
Japanese (ja)
Inventor
Jiyunkou Takagi
Tadaaki Inoue
Koji Tomita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP8172579A priority Critical patent/JPS566483A/en
Publication of JPS566483A publication Critical patent/JPS566483A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To eliminate the nonlinearity caused by a single current enclosure structure in a double current contraction type light emitting diode by forming a current contraction portion for limiting a light emitting region in the upper and the lower directions of the light emitting layer. CONSTITUTION:Upper and lower current contraction diameters dw and de are formed equal. An electric current implanted to the upper current contraction portion 39 from a P-type side electrode 36 flows as it is toward an opposite electrode 40 directly thereunder, and even if the input current level is altered, no current path changes, and the light emitting diameter d does not accordingly vary. When the layer resistance of the P<+>-type diffused layer of the upper current contraction portion 39 is further formed sufficiently low, the current density in the light emitting region d becomes constant. Accordingly, the current density distribution does not become in disorder due to the variations in the input current level.
JP8172579A 1979-06-27 1979-06-27 Double current contraction type light emiting diode Pending JPS566483A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8172579A JPS566483A (en) 1979-06-27 1979-06-27 Double current contraction type light emiting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8172579A JPS566483A (en) 1979-06-27 1979-06-27 Double current contraction type light emiting diode

Publications (1)

Publication Number Publication Date
JPS566483A true JPS566483A (en) 1981-01-23

Family

ID=13754381

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8172579A Pending JPS566483A (en) 1979-06-27 1979-06-27 Double current contraction type light emiting diode

Country Status (1)

Country Link
JP (1) JPS566483A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57179954A (en) * 1981-04-27 1982-11-05 Sony Corp Optical type disc player
JPS5968830A (en) * 1982-10-14 1984-04-18 Toshiba Corp Reproducer of optical information
JPS63131586A (en) * 1986-11-21 1988-06-03 Toshiba Corp Semiconductor light-emitting device
JP2015118043A (en) * 2013-12-19 2015-06-25 ブラザー工業株式会社 Inspection device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57179954A (en) * 1981-04-27 1982-11-05 Sony Corp Optical type disc player
JPH0219538B2 (en) * 1981-04-27 1990-05-02 Sony Corp
JPS5968830A (en) * 1982-10-14 1984-04-18 Toshiba Corp Reproducer of optical information
JPS6322369B2 (en) * 1982-10-14 1988-05-11 Tokyo Shibaura Electric Co
JPS63131586A (en) * 1986-11-21 1988-06-03 Toshiba Corp Semiconductor light-emitting device
JP2015118043A (en) * 2013-12-19 2015-06-25 ブラザー工業株式会社 Inspection device

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