JPS566468A - Semiconductor integrated device - Google Patents

Semiconductor integrated device

Info

Publication number
JPS566468A
JPS566468A JP8166179A JP8166179A JPS566468A JP S566468 A JPS566468 A JP S566468A JP 8166179 A JP8166179 A JP 8166179A JP 8166179 A JP8166179 A JP 8166179A JP S566468 A JPS566468 A JP S566468A
Authority
JP
Japan
Prior art keywords
light
amplifier circuit
signal
semiconductor integrated
controller
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8166179A
Other languages
Japanese (ja)
Other versions
JPS5846071B2 (en
Inventor
Akira Ote
Masanori Noguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yokogawa Electric Corp
Original Assignee
Yokogawa Hokushin Electric Corp
Yokogawa Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yokogawa Hokushin Electric Corp, Yokogawa Electric Works Ltd filed Critical Yokogawa Hokushin Electric Corp
Priority to JP54081661A priority Critical patent/JPS5846071B2/en
Publication of JPS566468A publication Critical patent/JPS566468A/en
Publication of JPS5846071B2 publication Critical patent/JPS5846071B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02016—Circuit arrangements of general character for the devices
    • H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02021—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for solar cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To amplify a low level electric signal without mixture of noise by utilizing a light signal for the supply of electric power and transmission of an output signal. CONSTITUTION:An amplifier circuit 4, a light receiver 5 and a light controller 6 are formed on the surface of a semiconductor substrate 3 in a semiconductor integrated circuit 2. An electric energy converted in the light receiver 5 is supplied to the amplifier circuit 4 to operate the respective circuits forming the amplifier circuit 4. The light controller 6 is, for example, a light controlled element such as a light emitting diode or a liquid crystal to control the intensity of the light or the light transmission coefficiency in response to the output signal from the amplifier circuit 4. One end of an output optical fiber 8 is connected to the light controller 6.
JP54081661A 1979-06-28 1979-06-28 semiconductor integrated device Expired JPS5846071B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54081661A JPS5846071B2 (en) 1979-06-28 1979-06-28 semiconductor integrated device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54081661A JPS5846071B2 (en) 1979-06-28 1979-06-28 semiconductor integrated device

Publications (2)

Publication Number Publication Date
JPS566468A true JPS566468A (en) 1981-01-23
JPS5846071B2 JPS5846071B2 (en) 1983-10-14

Family

ID=13752502

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54081661A Expired JPS5846071B2 (en) 1979-06-28 1979-06-28 semiconductor integrated device

Country Status (1)

Country Link
JP (1) JPS5846071B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58108777A (en) * 1981-11-25 1983-06-28 Mitsubishi Electric Corp Semiconductor device
JPS62239028A (en) * 1986-04-11 1987-10-19 Hamamatsu Photonics Kk Color temperature detecting device
US7579579B2 (en) 2007-03-21 2009-08-25 Em Microelectronic-Marin S.A. Integrated photoreceptor circuit and optoelectronic component including the same with electric contact pads arranged solely on side of the processing area which is juxtaposed with the photosensitive area
EP2175633A3 (en) * 2008-10-10 2012-10-31 Sony Corporation Solid-state image pickup device, optical apparatus, signal processing apparatus, and signal processing system

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5030930U (en) * 1973-07-13 1975-04-05
JPS5181584A (en) * 1975-01-13 1976-07-16 Nippon Electric Co
JPS51113425A (en) * 1975-03-31 1976-10-06 Nippon Telegr & Teleph Corp <Ntt> Optical system for image sensor
JPS5221868U (en) * 1976-04-01 1977-02-16

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5030930U (en) * 1973-07-13 1975-04-05
JPS5181584A (en) * 1975-01-13 1976-07-16 Nippon Electric Co
JPS51113425A (en) * 1975-03-31 1976-10-06 Nippon Telegr & Teleph Corp <Ntt> Optical system for image sensor
JPS5221868U (en) * 1976-04-01 1977-02-16

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58108777A (en) * 1981-11-25 1983-06-28 Mitsubishi Electric Corp Semiconductor device
JPS62239028A (en) * 1986-04-11 1987-10-19 Hamamatsu Photonics Kk Color temperature detecting device
US7579579B2 (en) 2007-03-21 2009-08-25 Em Microelectronic-Marin S.A. Integrated photoreceptor circuit and optoelectronic component including the same with electric contact pads arranged solely on side of the processing area which is juxtaposed with the photosensitive area
EP2175633A3 (en) * 2008-10-10 2012-10-31 Sony Corporation Solid-state image pickup device, optical apparatus, signal processing apparatus, and signal processing system
US8368767B2 (en) 2008-10-10 2013-02-05 Sony Corporation Solid-state image pickup device, optical apparatus, signal processing apparatus, and signal processing system

Also Published As

Publication number Publication date
JPS5846071B2 (en) 1983-10-14

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