JPS5661170A - Preparation of field effect transistor - Google Patents

Preparation of field effect transistor

Info

Publication number
JPS5661170A
JPS5661170A JP13915479A JP13915479A JPS5661170A JP S5661170 A JPS5661170 A JP S5661170A JP 13915479 A JP13915479 A JP 13915479A JP 13915479 A JP13915479 A JP 13915479A JP S5661170 A JPS5661170 A JP S5661170A
Authority
JP
Japan
Prior art keywords
substrate
layer
electrode
concave portion
extending
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13915479A
Other languages
Japanese (ja)
Other versions
JPS5914906B2 (en
Inventor
Takeshi Suzuki
Yoshinobu Kadowaki
Takashi Ishii
Mutsuyuki Otsubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13915479A priority Critical patent/JPS5914906B2/en
Publication of JPS5661170A publication Critical patent/JPS5661170A/en
Publication of JPS5914906B2 publication Critical patent/JPS5914906B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10158—Shape being other than a cuboid at the passive surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To eliminate the need for a wire for connecting electrodes of a field effect transistor and improve its radiating efficiency by making a concave portion for forming a main electrode in the upper surface of a semiconductor substrate and allowing the electrode provided in the concave portion to directly contact with a plated heat sink provided on the substrate lower surface. CONSTITUTION:A concave portion 9 is made in an N type layer 2 on a semiinsulative substrate 1, extending into the substrate 1. The layer 2 is etched so as to leave only a portion of it extending over one of the edges of the concave portion 9 and the central portion of the substrate 1. Then a source electrode 3 is formed covering the side walls and bottom of the concave portion 9 and extending on the end of the remaining layer 2, and a gate electrode 5 and a drain electrode 4 are provided on the layer 2. After that, with only the circumference left, the lower surface of the substrate 1 is etched to allow the electrode 3 at the bottom of the concave portion 9 to be exposed, and the whole lower surface of the substrate 1 is coated with a metal layer 10 so that it contacts with the electrode 3. Then a resist layer 11 is provided on the circumference of the substrate lower surface, and a plated heat sink 12 is secured through a plated layer 14 to the layer 10 surrounded with the resist layer 11. Thus, the sink is used also as an electrode material.
JP13915479A 1979-10-25 1979-10-25 Method for manufacturing field effect transistors Expired JPS5914906B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13915479A JPS5914906B2 (en) 1979-10-25 1979-10-25 Method for manufacturing field effect transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13915479A JPS5914906B2 (en) 1979-10-25 1979-10-25 Method for manufacturing field effect transistors

Publications (2)

Publication Number Publication Date
JPS5661170A true JPS5661170A (en) 1981-05-26
JPS5914906B2 JPS5914906B2 (en) 1984-04-06

Family

ID=15238818

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13915479A Expired JPS5914906B2 (en) 1979-10-25 1979-10-25 Method for manufacturing field effect transistors

Country Status (1)

Country Link
JP (1) JPS5914906B2 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5892277A (en) * 1981-11-28 1983-06-01 Mitsubishi Electric Corp Manufacture of field effect transistor
JPS59117171A (en) * 1982-12-23 1984-07-06 Nec Corp High-frequency high-output field-effect transistor
JPS59124750A (en) * 1982-12-29 1984-07-18 Fujitsu Ltd Semiconductor device
JPS6159753A (en) * 1984-08-30 1986-03-27 Mitsubishi Electric Corp Via hole type semiconductor device
JPS62222656A (en) * 1986-03-25 1987-09-30 Nec Corp Semiconductor device
JPS62252174A (en) * 1986-04-24 1987-11-02 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device
JPH0399470A (en) * 1989-09-12 1991-04-24 Mitsubishi Electric Corp Manufacture of semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4655177A (en) * 1985-06-28 1987-04-07 Cummins Engine Company, Inc. Rocker arm support assembly

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5892277A (en) * 1981-11-28 1983-06-01 Mitsubishi Electric Corp Manufacture of field effect transistor
JPS59117171A (en) * 1982-12-23 1984-07-06 Nec Corp High-frequency high-output field-effect transistor
JPS59124750A (en) * 1982-12-29 1984-07-18 Fujitsu Ltd Semiconductor device
JPS6159753A (en) * 1984-08-30 1986-03-27 Mitsubishi Electric Corp Via hole type semiconductor device
JPS62222656A (en) * 1986-03-25 1987-09-30 Nec Corp Semiconductor device
JPS62252174A (en) * 1986-04-24 1987-11-02 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device
JPH0399470A (en) * 1989-09-12 1991-04-24 Mitsubishi Electric Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS5914906B2 (en) 1984-04-06

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