JPS5655056A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS5655056A JPS5655056A JP13141779A JP13141779A JPS5655056A JP S5655056 A JPS5655056 A JP S5655056A JP 13141779 A JP13141779 A JP 13141779A JP 13141779 A JP13141779 A JP 13141779A JP S5655056 A JPS5655056 A JP S5655056A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor device
- aluminum
- formation
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To prevent the decrease in the withstand voltage of a semiconductor device by forming a passivation insulating film through an alumina layer on the surface of a semiconductor element, thereby avoiding the formation of a modified layer thereon. CONSTITUTION:An N<-> type GaAs layer 2 and an N type GaAs layer 3 are laminated on a semi-insulating GaAs substrate 1, a Schottky gate electrode 6 made of aluminum and source and drain electrodes 4 and 5 of Au-Ge are formed thereon, then aluminum is evaporated on the whole surface, is anodized and is thus formed into an alumina layer 10, and a passivation insulating film 7 of SiO2 layer or the like is formed through the layer 10. Since this eliminates the formation of a modified layer due to the dispersion of Ga in the SiO2 layer, it can improve the electric characteristics, reliability and manufacturing yield of the semiconductor device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13141779A JPS5655056A (en) | 1979-10-12 | 1979-10-12 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13141779A JPS5655056A (en) | 1979-10-12 | 1979-10-12 | Semiconductor device and manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5655056A true JPS5655056A (en) | 1981-05-15 |
Family
ID=15057469
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13141779A Pending JPS5655056A (en) | 1979-10-12 | 1979-10-12 | Semiconductor device and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5655056A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008035403A1 (en) * | 2006-09-20 | 2008-03-27 | Fujitsu Limited | Field-effect transistor |
-
1979
- 1979-10-12 JP JP13141779A patent/JPS5655056A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008035403A1 (en) * | 2006-09-20 | 2008-03-27 | Fujitsu Limited | Field-effect transistor |
EP2065925A1 (en) * | 2006-09-20 | 2009-06-03 | Fujitsu Limited | Field-effect transistor |
EP2065925A4 (en) * | 2006-09-20 | 2009-09-02 | Fujitsu Ltd | Field-effect transistor |
US8969919B2 (en) | 2006-09-20 | 2015-03-03 | Fujitsu Limited | Field-effect transistor |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5658267A (en) | Insulated gate type field-effect transistor | |
JPS56125868A (en) | Thin-film semiconductor device | |
JPS57109367A (en) | Semiconductor memory device | |
JPS5499576A (en) | Thin-film transistor and its manufacture | |
JPS5655056A (en) | Semiconductor device and manufacture thereof | |
GB1149589A (en) | Thin film active element | |
JPS5691477A (en) | Semiconductor | |
JPS55117281A (en) | 3[5 group compound semiconductor hetero structure mosfet | |
JPH0423834B2 (en) | ||
GB1465078A (en) | Semiconductor devices | |
JPS54107273A (en) | Production of field effect transistor | |
JPS5610954A (en) | Semiconductor device | |
JPS5643768A (en) | Fet transistor and method of producing the same | |
JPS54101294A (en) | Dummy mos semiconductor device | |
JPS5739583A (en) | Semiconductor device | |
JPS5676547A (en) | Semiconductor device | |
US3436619A (en) | Insulated gate field-effect transistor with widening current path between source and drain | |
JPS5591848A (en) | Preparation of microwave integrated circuit | |
GB1271639A (en) | Improvements in or relating to metal-semiconductor diodes | |
JPS6482676A (en) | Iii-v compound semiconductor field-effect transistor and manufacture thereof | |
JPS5727067A (en) | Manufacture of field-effect transistor | |
JPS5562769A (en) | Semiconductor device | |
JPS56101779A (en) | Schottky barrier diode | |
JPS5676576A (en) | Semiconductor device and manufacture thereof | |
JPS5879774A (en) | Semiconductor device |