JPS5644219A - Electronic circuit - Google Patents
Electronic circuitInfo
- Publication number
- JPS5644219A JPS5644219A JP12138379A JP12138379A JPS5644219A JP S5644219 A JPS5644219 A JP S5644219A JP 12138379 A JP12138379 A JP 12138379A JP 12138379 A JP12138379 A JP 12138379A JP S5644219 A JPS5644219 A JP S5644219A
- Authority
- JP
- Japan
- Prior art keywords
- source
- drain
- gate
- voltage
- constitution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
Landscapes
- Electronic Switches (AREA)
- Manipulation Of Pulses (AREA)
Abstract
PURPOSE:To make the operation speed high, by applying an input signal, by which the breakdown phenomenon is shown between the source and the drain by the operating voltage, to the gate. CONSTITUTION:DC voltage VDS is applied to the drain of MOSFETQ where the breakdown characteristic is improved by forming low-density layers having the same polarities as the drain and the source around the P-N junction part of the drain and the source, and load resistance RL is connected to the source, and bias voltage VGS and input signal source Vin are applied to the gate, and output Vout is obtained from the source. DC voltage VDS is set to dielectric strength BVDSX between the drain and the source or more to give a constitution where the circuit between the source and the drain is broken down by the gate voltage. Since the forward operation of the P-N junction is not used but the breakdown characteristic between the source and the drain is used, the operation speed becomes high.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12138379A JPS5644219A (en) | 1979-09-20 | 1979-09-20 | Electronic circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12138379A JPS5644219A (en) | 1979-09-20 | 1979-09-20 | Electronic circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5644219A true JPS5644219A (en) | 1981-04-23 |
Family
ID=14809843
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12138379A Pending JPS5644219A (en) | 1979-09-20 | 1979-09-20 | Electronic circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5644219A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018107895A (en) * | 2016-12-26 | 2018-07-05 | 三菱電機株式会社 | Power converter |
-
1979
- 1979-09-20 JP JP12138379A patent/JPS5644219A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018107895A (en) * | 2016-12-26 | 2018-07-05 | 三菱電機株式会社 | Power converter |
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