JPS5644219A - Electronic circuit - Google Patents

Electronic circuit

Info

Publication number
JPS5644219A
JPS5644219A JP12138379A JP12138379A JPS5644219A JP S5644219 A JPS5644219 A JP S5644219A JP 12138379 A JP12138379 A JP 12138379A JP 12138379 A JP12138379 A JP 12138379A JP S5644219 A JPS5644219 A JP S5644219A
Authority
JP
Japan
Prior art keywords
source
drain
gate
voltage
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12138379A
Other languages
Japanese (ja)
Inventor
Koichi Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12138379A priority Critical patent/JPS5644219A/en
Publication of JPS5644219A publication Critical patent/JPS5644219A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors

Landscapes

  • Electronic Switches (AREA)
  • Manipulation Of Pulses (AREA)

Abstract

PURPOSE:To make the operation speed high, by applying an input signal, by which the breakdown phenomenon is shown between the source and the drain by the operating voltage, to the gate. CONSTITUTION:DC voltage VDS is applied to the drain of MOSFETQ where the breakdown characteristic is improved by forming low-density layers having the same polarities as the drain and the source around the P-N junction part of the drain and the source, and load resistance RL is connected to the source, and bias voltage VGS and input signal source Vin are applied to the gate, and output Vout is obtained from the source. DC voltage VDS is set to dielectric strength BVDSX between the drain and the source or more to give a constitution where the circuit between the source and the drain is broken down by the gate voltage. Since the forward operation of the P-N junction is not used but the breakdown characteristic between the source and the drain is used, the operation speed becomes high.
JP12138379A 1979-09-20 1979-09-20 Electronic circuit Pending JPS5644219A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12138379A JPS5644219A (en) 1979-09-20 1979-09-20 Electronic circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12138379A JPS5644219A (en) 1979-09-20 1979-09-20 Electronic circuit

Publications (1)

Publication Number Publication Date
JPS5644219A true JPS5644219A (en) 1981-04-23

Family

ID=14809843

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12138379A Pending JPS5644219A (en) 1979-09-20 1979-09-20 Electronic circuit

Country Status (1)

Country Link
JP (1) JPS5644219A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018107895A (en) * 2016-12-26 2018-07-05 三菱電機株式会社 Power converter

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018107895A (en) * 2016-12-26 2018-07-05 三菱電機株式会社 Power converter

Similar Documents

Publication Publication Date Title
JPS5785110A (en) Dc stabilized power supply circuit
SE8301708L (en) TEMPERATURE-INDEPENDENT, AMPLIFYING CONTROL CIRCUIT
JPS5644219A (en) Electronic circuit
JPS5467363A (en) C-mos circuit of high voltage operation
JPS5483759A (en) Mos inverter circuit
JPS5644220A (en) Waveform shaping circuit
JPS5644218A (en) Electronic circuit using field effect transistor
JPS5644917A (en) Constant-voltage circuit
JPS5480058A (en) Schmitt trigger circuit
JPS5447471A (en) Electronic circuit
JPS5586222A (en) Level shift circuit
JPS542042A (en) Oscillation circuit
JPS5419365A (en) High frequency high output transistor
JPS5539413A (en) Schmitt trigger circuit
JPS5545253A (en) Contactless detection switch
JPS57162830A (en) Schmitt trigger circuit
JPS57180213A (en) Mos type impedance converter
ES475184A1 (en) Transformer connected amplifying stages
JPS56111308A (en) Amplifying circuit with offset
JPS5539056A (en) Main voltage detecting circuit
JPS55158726A (en) Phase delay circuit
JPS5570071A (en) Mosic protective circuit
JPS5568729A (en) Input circuit with input level decision
JPS55107309A (en) Feedback circuit
JPS5538784A (en) Oscillation circuit