JPS5638819A - Dry etching device - Google Patents
Dry etching deviceInfo
- Publication number
- JPS5638819A JPS5638819A JP11499779A JP11499779A JPS5638819A JP S5638819 A JPS5638819 A JP S5638819A JP 11499779 A JP11499779 A JP 11499779A JP 11499779 A JP11499779 A JP 11499779A JP S5638819 A JPS5638819 A JP S5638819A
- Authority
- JP
- Japan
- Prior art keywords
- permanent magnet
- steel
- anode
- cathode
- plate type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To elevate the generation efficiency of plasma of a parallel flat plate type dry etching device by a method wherein a permanent magnet is provided at the cathode or at the anode to generate a uniform and strong magnetic field in the neighborhood of a sample. CONSTITUTION:A plate type permanent magnet 8 is provided coming in contact with the face of a cathode 1, or a plate type permanent magnet 9 is provided coming in contact with the face of an anode 2. As the material to form the permanent magnet, one of carbon steel, tungsten steel, KS steel, MK steel or Ko ster steel suitable for the reaction gas to be used for etching is adopted. The thickness of the permanent magnet is suitable with about 5mm.. By this way, the uniform etching speed can be obtained in the direction of distance x from the center of the cathode or anode, and the irregularity of etching at the center part and the surrounding part can be suppressed at about + or -10%.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11499779A JPS5638819A (en) | 1979-09-07 | 1979-09-07 | Dry etching device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11499779A JPS5638819A (en) | 1979-09-07 | 1979-09-07 | Dry etching device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5638819A true JPS5638819A (en) | 1981-04-14 |
Family
ID=14651741
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11499779A Pending JPS5638819A (en) | 1979-09-07 | 1979-09-07 | Dry etching device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5638819A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5851933A (en) * | 1981-09-24 | 1983-03-26 | Hitachi Ltd | Dry etching apparatus |
US4754666A (en) * | 1984-11-15 | 1988-07-05 | Aisin Seiki Kabushiki Kaisha | Power transmission control system |
JPH01214123A (en) * | 1988-02-23 | 1989-08-28 | Tel Sagami Ltd | Plasma processing device |
-
1979
- 1979-09-07 JP JP11499779A patent/JPS5638819A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5851933A (en) * | 1981-09-24 | 1983-03-26 | Hitachi Ltd | Dry etching apparatus |
JPH0235453B2 (en) * | 1981-09-24 | 1990-08-10 | Hitachi Ltd | |
US4754666A (en) * | 1984-11-15 | 1988-07-05 | Aisin Seiki Kabushiki Kaisha | Power transmission control system |
JPH01214123A (en) * | 1988-02-23 | 1989-08-28 | Tel Sagami Ltd | Plasma processing device |
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