JPS5638819A - Dry etching device - Google Patents

Dry etching device

Info

Publication number
JPS5638819A
JPS5638819A JP11499779A JP11499779A JPS5638819A JP S5638819 A JPS5638819 A JP S5638819A JP 11499779 A JP11499779 A JP 11499779A JP 11499779 A JP11499779 A JP 11499779A JP S5638819 A JPS5638819 A JP S5638819A
Authority
JP
Japan
Prior art keywords
permanent magnet
steel
anode
cathode
plate type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11499779A
Other languages
Japanese (ja)
Inventor
Tetsuya Ogawa
Takashi Horiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11499779A priority Critical patent/JPS5638819A/en
Publication of JPS5638819A publication Critical patent/JPS5638819A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To elevate the generation efficiency of plasma of a parallel flat plate type dry etching device by a method wherein a permanent magnet is provided at the cathode or at the anode to generate a uniform and strong magnetic field in the neighborhood of a sample. CONSTITUTION:A plate type permanent magnet 8 is provided coming in contact with the face of a cathode 1, or a plate type permanent magnet 9 is provided coming in contact with the face of an anode 2. As the material to form the permanent magnet, one of carbon steel, tungsten steel, KS steel, MK steel or Ko ster steel suitable for the reaction gas to be used for etching is adopted. The thickness of the permanent magnet is suitable with about 5mm.. By this way, the uniform etching speed can be obtained in the direction of distance x from the center of the cathode or anode, and the irregularity of etching at the center part and the surrounding part can be suppressed at about + or -10%.
JP11499779A 1979-09-07 1979-09-07 Dry etching device Pending JPS5638819A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11499779A JPS5638819A (en) 1979-09-07 1979-09-07 Dry etching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11499779A JPS5638819A (en) 1979-09-07 1979-09-07 Dry etching device

Publications (1)

Publication Number Publication Date
JPS5638819A true JPS5638819A (en) 1981-04-14

Family

ID=14651741

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11499779A Pending JPS5638819A (en) 1979-09-07 1979-09-07 Dry etching device

Country Status (1)

Country Link
JP (1) JPS5638819A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5851933A (en) * 1981-09-24 1983-03-26 Hitachi Ltd Dry etching apparatus
US4754666A (en) * 1984-11-15 1988-07-05 Aisin Seiki Kabushiki Kaisha Power transmission control system
JPH01214123A (en) * 1988-02-23 1989-08-28 Tel Sagami Ltd Plasma processing device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5851933A (en) * 1981-09-24 1983-03-26 Hitachi Ltd Dry etching apparatus
JPH0235453B2 (en) * 1981-09-24 1990-08-10 Hitachi Ltd
US4754666A (en) * 1984-11-15 1988-07-05 Aisin Seiki Kabushiki Kaisha Power transmission control system
JPH01214123A (en) * 1988-02-23 1989-08-28 Tel Sagami Ltd Plasma processing device

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