JPS5636176A - Light emission diode drive circuit - Google Patents

Light emission diode drive circuit

Info

Publication number
JPS5636176A
JPS5636176A JP11266679A JP11266679A JPS5636176A JP S5636176 A JPS5636176 A JP S5636176A JP 11266679 A JP11266679 A JP 11266679A JP 11266679 A JP11266679 A JP 11266679A JP S5636176 A JPS5636176 A JP S5636176A
Authority
JP
Japan
Prior art keywords
transistor
resistor
light emission
side transistor
emission diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11266679A
Other languages
Japanese (ja)
Inventor
Shigeo Okada
Terutsugu Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP11266679A priority Critical patent/JPS5636176A/en
Publication of JPS5636176A publication Critical patent/JPS5636176A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/603—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors with coupled emitters

Landscapes

  • Optical Communication System (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To reduce power consumption and attain high-speed operation, by employing an asymmetric nonsaturation type switching circuit. CONSTITUTION:Power voltage is applied to the collector terminal of an input side transistor Q1. A resistor R or a Zener diode is provided between the emitter terminals of the transistor Q1 and a reference side transistor Q2. The collector terminal of the reference side transistor Q2 and the base terminal of a transistor Q3 at the side of a light emission diode LED are connected to each other through a resistor. The collector terminal of the reference side transistor Q2 is connected to that of the input side transistor Q1 through a resistor. The emitter terminal of the reference side transistor Q2 is grounded through a resistor, while the light emission diode LED is connected to the collector terminal of the transistor Q3 through a resistor.
JP11266679A 1979-09-03 1979-09-03 Light emission diode drive circuit Pending JPS5636176A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11266679A JPS5636176A (en) 1979-09-03 1979-09-03 Light emission diode drive circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11266679A JPS5636176A (en) 1979-09-03 1979-09-03 Light emission diode drive circuit

Publications (1)

Publication Number Publication Date
JPS5636176A true JPS5636176A (en) 1981-04-09

Family

ID=14592435

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11266679A Pending JPS5636176A (en) 1979-09-03 1979-09-03 Light emission diode drive circuit

Country Status (1)

Country Link
JP (1) JPS5636176A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61178944A (en) * 1984-11-16 1986-08-11 ドラゴコ・ゲルベルデインク・アンド・コムパニ−・ゲゼルシヤフト・ミト・ベシユレンクテル・ハフツング 4-(2,2,3-trimethylcyclopent-3-en-1-yl)-but-3-en-1-ols, manufacture and use as aromatics
JPS645078A (en) * 1987-06-27 1989-01-10 Nec Corp Led driving circuit
JPH01138766A (en) * 1987-11-25 1989-05-31 Nec Corp Driving circuit for led
JPH02309828A (en) * 1989-05-25 1990-12-25 Mitsubishi Electric Corp Drive method for laser diode and laser diode module
US5874649A (en) * 1996-03-05 1999-02-23 Kao Corporation Process for preparing unsaturated alcohol
US5994291A (en) * 1996-09-17 1999-11-30 Takasago International Coporation (E)-(R)-2-alkyl-4-(2,2,3,-Trimethylcyclopent-3-en-1-yl)-2-buten-1-ol, process for preparing the same, and use thereof
WO2021095163A1 (en) * 2019-11-13 2021-05-20 日本電信電話株式会社 High-frequency line structure, subassembly, line card, and manufacturing method for high-frequency line structure

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61178944A (en) * 1984-11-16 1986-08-11 ドラゴコ・ゲルベルデインク・アンド・コムパニ−・ゲゼルシヤフト・ミト・ベシユレンクテル・ハフツング 4-(2,2,3-trimethylcyclopent-3-en-1-yl)-but-3-en-1-ols, manufacture and use as aromatics
JPH0513135B2 (en) * 1984-11-16 1993-02-19 Doragoko Geruberudeingu Unto Co Gmbh
JPS645078A (en) * 1987-06-27 1989-01-10 Nec Corp Led driving circuit
JPH01138766A (en) * 1987-11-25 1989-05-31 Nec Corp Driving circuit for led
JPH02309828A (en) * 1989-05-25 1990-12-25 Mitsubishi Electric Corp Drive method for laser diode and laser diode module
US5874649A (en) * 1996-03-05 1999-02-23 Kao Corporation Process for preparing unsaturated alcohol
US5994291A (en) * 1996-09-17 1999-11-30 Takasago International Coporation (E)-(R)-2-alkyl-4-(2,2,3,-Trimethylcyclopent-3-en-1-yl)-2-buten-1-ol, process for preparing the same, and use thereof
WO2021095163A1 (en) * 2019-11-13 2021-05-20 日本電信電話株式会社 High-frequency line structure, subassembly, line card, and manufacturing method for high-frequency line structure
CN114730980A (en) * 2019-11-13 2022-07-08 日本电信电话株式会社 High-frequency circuit structure, subassembly, line card, and method for manufacturing high-frequency circuit structure
CN114730980B (en) * 2019-11-13 2024-03-19 日本电信电话株式会社 High-frequency circuit structure, subassembly, circuit card, and method for manufacturing high-frequency circuit structure

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