JPS5629891A - Semiconductor associative memory circuit - Google Patents

Semiconductor associative memory circuit

Info

Publication number
JPS5629891A
JPS5629891A JP10296979A JP10296979A JPS5629891A JP S5629891 A JPS5629891 A JP S5629891A JP 10296979 A JP10296979 A JP 10296979A JP 10296979 A JP10296979 A JP 10296979A JP S5629891 A JPS5629891 A JP S5629891A
Authority
JP
Japan
Prior art keywords
line
self
associative memory
potential
common
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10296979A
Other languages
Japanese (ja)
Other versions
JPS6045502B2 (en
Inventor
Takeshi Ogura
Tadanobu Nikaido
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP10296979A priority Critical patent/JPS6045502B2/en
Publication of JPS5629891A publication Critical patent/JPS5629891A/en
Publication of JPS6045502B2 publication Critical patent/JPS6045502B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G11C15/043—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using capacitive charge storage elements

Landscapes

  • Static Random-Access Memory (AREA)
  • Dram (AREA)

Abstract

PURPOSE: To obtain the associative memory circuit having self-refresh function with a simple constitution, by connecting two sets of RAMs formed with three sets of MIS transistors in specified connection by means of MIS transistor.
CONSTITUTION: RAM1 is formed with MIS transistors Q1-1WQ3-1, in which the source is in common connection and the drain and gate are connected to the common lines K1-1, K2WK4, and bit line B-1 via the capacitor C1-1. RAM1 and similar RAM2 are connected via the MIS transistor Q4, the like K3 and common line K5 are respectively at low and high potential, the retrieval data potential and inversion potential are fed respectively to the common line K1-2 and K1-1, and the line K2 is further at high potential, then the exclusive logical sum between the memory data and the retrieved data is output to both the terminals 3, 4 of the transistor Q4 for associative operation. Similarly, when the line K1-1 and K1-2 are at high potential, the self-refresh is made, allowing to obtain the associative memory having the self-refresh function in high speed operation with a simple constitution less in the hardware of peripheral circuit.
COPYRIGHT: (C)1981,JPO&Japio
JP10296979A 1979-08-13 1979-08-13 Semiconductor content addressable memory circuit Expired JPS6045502B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10296979A JPS6045502B2 (en) 1979-08-13 1979-08-13 Semiconductor content addressable memory circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10296979A JPS6045502B2 (en) 1979-08-13 1979-08-13 Semiconductor content addressable memory circuit

Publications (2)

Publication Number Publication Date
JPS5629891A true JPS5629891A (en) 1981-03-25
JPS6045502B2 JPS6045502B2 (en) 1985-10-09

Family

ID=14341589

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10296979A Expired JPS6045502B2 (en) 1979-08-13 1979-08-13 Semiconductor content addressable memory circuit

Country Status (1)

Country Link
JP (1) JPS6045502B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003028034A3 (en) * 2001-09-25 2003-10-30 Micron Technology Inc A tertiary cam cell

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003028034A3 (en) * 2001-09-25 2003-10-30 Micron Technology Inc A tertiary cam cell
US6781856B2 (en) 2001-09-25 2004-08-24 Micron Technology, Inc. Tertiary CAM cell
US6785153B2 (en) 2001-09-25 2004-08-31 Micron Technology, Inc. Tertiary CAM cell

Also Published As

Publication number Publication date
JPS6045502B2 (en) 1985-10-09

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