JPS5629379A - Manufacture of infrared ray detector of indium antimony - Google Patents

Manufacture of infrared ray detector of indium antimony

Info

Publication number
JPS5629379A
JPS5629379A JP10498379A JP10498379A JPS5629379A JP S5629379 A JPS5629379 A JP S5629379A JP 10498379 A JP10498379 A JP 10498379A JP 10498379 A JP10498379 A JP 10498379A JP S5629379 A JPS5629379 A JP S5629379A
Authority
JP
Japan
Prior art keywords
substrate
type
layer
infrared ray
insb
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10498379A
Other languages
Japanese (ja)
Inventor
Hiroo Nagasaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10498379A priority Critical patent/JPS5629379A/en
Publication of JPS5629379A publication Critical patent/JPS5629379A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP

Abstract

PURPOSE:To obtain the detector which can pass the infrared ray without fail, by epitaxially growing an N<+> type InSb layer on a P type InSb substrate in a liquid phase, abrading the substrate from the bottom surface in order to make the substrate thin, thereafter selectively forming an N type region reaching the epitaxial layer. CONSTITUTION:An N<+> type InSb layer 22 is epitaxially grown in a liquid phase on a P type InSb substrate 21. The bottom surface of the substrate 21 is mechanically abraded or etched, thereby the thickness of the substrate 21 is reduced to the thickness of serveral mum and the state of a mirror surface is obtained. Then, a protective film 23 having a specified pattern is formed on the mirror surface of the reduced substrate 21. A plurality of N type or N<+> type regions 24 reaching the inside of the substrate 21 are formed by the diffusion, the ion implantation, and the laser irradiation by using the windows provided in the layer 23. Then, the film 23 is removed, and the portion other than the coupling portion where other charge coupled device is directly coupled with the region 24 is covered by an insulating film 25 in order to prevent the generation of leakage currents. In this method, the characteristics of the detectors to be coupled with the charge couped device can be improved.
JP10498379A 1979-08-20 1979-08-20 Manufacture of infrared ray detector of indium antimony Pending JPS5629379A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10498379A JPS5629379A (en) 1979-08-20 1979-08-20 Manufacture of infrared ray detector of indium antimony

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10498379A JPS5629379A (en) 1979-08-20 1979-08-20 Manufacture of infrared ray detector of indium antimony

Publications (1)

Publication Number Publication Date
JPS5629379A true JPS5629379A (en) 1981-03-24

Family

ID=14395318

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10498379A Pending JPS5629379A (en) 1979-08-20 1979-08-20 Manufacture of infrared ray detector of indium antimony

Country Status (1)

Country Link
JP (1) JPS5629379A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05206499A (en) * 1991-08-08 1993-08-13 Santa Barbara Res Center Indium antimony photodetector
CN103762163A (en) * 2014-01-07 2014-04-30 中国电子科技集团公司第十一研究所 Method for manufacturing mask used for indium antimonide heat diffusion technology

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05206499A (en) * 1991-08-08 1993-08-13 Santa Barbara Res Center Indium antimony photodetector
CN103762163A (en) * 2014-01-07 2014-04-30 中国电子科技集团公司第十一研究所 Method for manufacturing mask used for indium antimonide heat diffusion technology
CN103762163B (en) * 2014-01-07 2016-07-06 中国电子科技集团公司第十一研究所 A kind of mask preparation method for indium antimonide thermal diffusion process

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