JPS5627981A - Light emitting semiconductor device - Google Patents
Light emitting semiconductor deviceInfo
- Publication number
- JPS5627981A JPS5627981A JP10400279A JP10400279A JPS5627981A JP S5627981 A JPS5627981 A JP S5627981A JP 10400279 A JP10400279 A JP 10400279A JP 10400279 A JP10400279 A JP 10400279A JP S5627981 A JPS5627981 A JP S5627981A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- semiconductor device
- emitting semiconductor
- chalcogenide glass
- semispherical shape
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000005387 chalcogenide glass Substances 0.000 abstract 3
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
- 229910052958 orpiment Inorganic materials 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
PURPOSE:To facilitate an easy fabrication of the light emitting semiconductor device and to improve the light emitting efficiency of the semiconductor device by coating chalcogenide glass through amorphous silicon film on a light emitting surface in semispherical shape. CONSTITUTION:An amorphous silicon film 9 is coated on the light emitting surface of a light emitting element by a sputtering or glowing means, and chalcogenide glass 10 such as As2S3 or the like is coated further thereon by a method of dropping in semispherical shape in the state of coating a light emitting semiconductor chip 1. The chalcogenide glass 10 has excellent improvement in emitting the light, and facilitates an easy fabrication of semispherical shape thereon.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10400279A JPS5627981A (en) | 1979-08-17 | 1979-08-17 | Light emitting semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10400279A JPS5627981A (en) | 1979-08-17 | 1979-08-17 | Light emitting semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5627981A true JPS5627981A (en) | 1981-03-18 |
JPS6222479B2 JPS6222479B2 (en) | 1987-05-18 |
Family
ID=14369065
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10400279A Granted JPS5627981A (en) | 1979-08-17 | 1979-08-17 | Light emitting semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5627981A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0679163U (en) * | 1993-04-21 | 1994-11-04 | 有限会社シマテック | LED lamps and stable illuminators |
US5468683A (en) * | 1992-09-25 | 1995-11-21 | U.S. Philips Corporation | Method of manufacturing an optoelectronic semiconductor device having a single wire between non-parallel surfaces |
JP2001102639A (en) * | 1999-09-30 | 2001-04-13 | Sumitomo 3M Ltd | Light-emitting diode and laser diode device sealed with fluoropolymer |
-
1979
- 1979-08-17 JP JP10400279A patent/JPS5627981A/en active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5468683A (en) * | 1992-09-25 | 1995-11-21 | U.S. Philips Corporation | Method of manufacturing an optoelectronic semiconductor device having a single wire between non-parallel surfaces |
JPH0679163U (en) * | 1993-04-21 | 1994-11-04 | 有限会社シマテック | LED lamps and stable illuminators |
JP2001102639A (en) * | 1999-09-30 | 2001-04-13 | Sumitomo 3M Ltd | Light-emitting diode and laser diode device sealed with fluoropolymer |
Also Published As
Publication number | Publication date |
---|---|
JPS6222479B2 (en) | 1987-05-18 |
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