JPS5617057A - Semiconductor inverter circuit element - Google Patents
Semiconductor inverter circuit elementInfo
- Publication number
- JPS5617057A JPS5617057A JP9214479A JP9214479A JPS5617057A JP S5617057 A JPS5617057 A JP S5617057A JP 9214479 A JP9214479 A JP 9214479A JP 9214479 A JP9214479 A JP 9214479A JP S5617057 A JPS5617057 A JP S5617057A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- inverter circuit
- diffused
- loading
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Logic Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To reduce the time constants and to improve the switching characteristics of the semiconductor inverter circuit element by forming a buried region under the common region of the drain and the source of driving and loading MOS transistors when forming an inverter circuit element with the transistors. CONSTITUTION:An N<+>-type buried region 20 is diffused in a P-type Si substrate 10, a P-type layer 11 is epitaxially grown on the entire surface including the region 20, and an N<+>-type region 22 is diffused as the drain region for the driving element and the source region of the loading element oppositely to the region 20 in the layer 11. Then, an N<+>-type source region 21 for the driving element and an N<+>-type drain region 23 for the loading element are diffused in the layers 11 at both sides of the region 22, a gate insulating film 52 for the driving element is coated on the surface of the layer 11 between the regions 21 and 22, and a gate insulating film 54 for the loading element is coated on the surface between the regions 22 and 23. Thereafter, the electrode 51 formed on the region 21 is grounded, and the electrode 54 attached to the region 23 is connected to a power supply voltage 54.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9214479A JPS5617057A (en) | 1979-07-21 | 1979-07-21 | Semiconductor inverter circuit element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9214479A JPS5617057A (en) | 1979-07-21 | 1979-07-21 | Semiconductor inverter circuit element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5617057A true JPS5617057A (en) | 1981-02-18 |
| JPS6212667B2 JPS6212667B2 (en) | 1987-03-19 |
Family
ID=14046233
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9214479A Granted JPS5617057A (en) | 1979-07-21 | 1979-07-21 | Semiconductor inverter circuit element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5617057A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6803485B1 (en) | 2020-01-27 | 2020-12-23 | グリー株式会社 | Computer programs, methods and server equipment |
-
1979
- 1979-07-21 JP JP9214479A patent/JPS5617057A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6212667B2 (en) | 1987-03-19 |
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