JPS56164583A - Manufacture of photosensitive semiconductor device - Google Patents

Manufacture of photosensitive semiconductor device

Info

Publication number
JPS56164583A
JPS56164583A JP6863080A JP6863080A JPS56164583A JP S56164583 A JPS56164583 A JP S56164583A JP 6863080 A JP6863080 A JP 6863080A JP 6863080 A JP6863080 A JP 6863080A JP S56164583 A JPS56164583 A JP S56164583A
Authority
JP
Japan
Prior art keywords
film
al2o3
transparent
lattice type
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6863080A
Other languages
Japanese (ja)
Other versions
JPS6148798B2 (en
Inventor
Hisao Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6863080A priority Critical patent/JPS56164583A/en
Publication of JPS56164583A publication Critical patent/JPS56164583A/en
Publication of JPS6148798B2 publication Critical patent/JPS6148798B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

PURPOSE:To contrive to improve the photoelectric conversion coefficient for the subject semiconductor device by a method wherein the metal film coated on a transparent insulated substrate is selectively anodic-oxidized and the metal film having a transparent film section is formed. CONSTITUTION:The Al film 8 of L thickness is evaporated on the transparent insulated substrate 1 and a lattice type resist mask is provided. An Al2O3 10 film of L thickness is obtained by having the Al film 8 anodic oxidated in a dilute sulfuric acid solution. When a mask 9 is removed, an Al2O3 11 and an Al 10 are arranged alternately and the difference in level of the two layers becomes 0.3- 0.5L or thereabouts making a gentle inclination from the Al 10 to Al2O3 11. Accordingly, no disconnection is generated on the transparent conductive film 2 formed on a lattice type electrode 11 and the film is formed thickly, thereby enabling to reduce electric resistance. Then amorphous Si 3-5 of P type dope, nondope and N type dope are laminated and an electrode is added, and a thin film solar battery with a lattice type electrode is now completed. Accordingly to this constitution, the device having a high photoelectric conversion coefficiency can be obtained.
JP6863080A 1980-05-22 1980-05-22 Manufacture of photosensitive semiconductor device Granted JPS56164583A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6863080A JPS56164583A (en) 1980-05-22 1980-05-22 Manufacture of photosensitive semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6863080A JPS56164583A (en) 1980-05-22 1980-05-22 Manufacture of photosensitive semiconductor device

Publications (2)

Publication Number Publication Date
JPS56164583A true JPS56164583A (en) 1981-12-17
JPS6148798B2 JPS6148798B2 (en) 1986-10-25

Family

ID=13379245

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6863080A Granted JPS56164583A (en) 1980-05-22 1980-05-22 Manufacture of photosensitive semiconductor device

Country Status (1)

Country Link
JP (1) JPS56164583A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5935491A (en) * 1982-08-24 1984-02-27 Sanyo Electric Co Ltd Photo semiconductor device
JPS6432814A (en) * 1987-07-28 1989-02-02 Nissan Motor Armrest mount structure of seat for car
JPH077174A (en) * 1993-01-28 1995-01-10 Gold Star Electron Co Ltd Photodiode and preparation thereof
US8110740B2 (en) * 2005-08-10 2012-02-07 Enplas Corporation Photoelectrode substrate of dye sensitizing solar cell, and method for producing same
WO2012030407A1 (en) * 2010-09-03 2012-03-08 Tetrasun, Inc. Fine line metallization of photovoltaic devices by partial lift-off of optical coatings
US9673341B2 (en) 2015-05-08 2017-06-06 Tetrasun, Inc. Photovoltaic devices with fine-line metallization and methods for manufacture

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5935491A (en) * 1982-08-24 1984-02-27 Sanyo Electric Co Ltd Photo semiconductor device
JPS6432814A (en) * 1987-07-28 1989-02-02 Nissan Motor Armrest mount structure of seat for car
JPH077174A (en) * 1993-01-28 1995-01-10 Gold Star Electron Co Ltd Photodiode and preparation thereof
US8110740B2 (en) * 2005-08-10 2012-02-07 Enplas Corporation Photoelectrode substrate of dye sensitizing solar cell, and method for producing same
WO2012030407A1 (en) * 2010-09-03 2012-03-08 Tetrasun, Inc. Fine line metallization of photovoltaic devices by partial lift-off of optical coatings
US8236604B2 (en) 2010-09-03 2012-08-07 Tetrasun, Inc. Fine line metallization of photovoltaic devices by partial lift-off of optical coatings
AU2011282499B2 (en) * 2010-09-03 2014-06-19 Tetrasun, Inc. Fine line metallization of photovoltaic devices by partial lift-off of optical coatings
AU2014224095B2 (en) * 2010-09-03 2016-11-17 Tetrasun, Inc. Fine line metallization of photovoltaic devices by partial lift-off of optical coatings
US9673341B2 (en) 2015-05-08 2017-06-06 Tetrasun, Inc. Photovoltaic devices with fine-line metallization and methods for manufacture

Also Published As

Publication number Publication date
JPS6148798B2 (en) 1986-10-25

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