JPS56162895A - Manufacture of semiconductor laser - Google Patents

Manufacture of semiconductor laser

Info

Publication number
JPS56162895A
JPS56162895A JP6677580A JP6677580A JPS56162895A JP S56162895 A JPS56162895 A JP S56162895A JP 6677580 A JP6677580 A JP 6677580A JP 6677580 A JP6677580 A JP 6677580A JP S56162895 A JPS56162895 A JP S56162895A
Authority
JP
Japan
Prior art keywords
layer
approx
flat part
substrate
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6677580A
Other languages
Japanese (ja)
Inventor
Kunio Ito
Takashi Sugino
Masaru Wada
Yuichi Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP6677580A priority Critical patent/JPS56162895A/en
Publication of JPS56162895A publication Critical patent/JPS56162895A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2238—Buried stripe structure with a terraced structure

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To largely improve the lifetime and the yield of a semiconductor laser by forming a layer including an active layer on a substrate having a stepwise diffrence, forming a metallic layer on the surface, removing the surface of the metallic layer and approximately flattening the surface of the metallic layer. CONSTITUTION:A step of 1.5mum of height is formed by etching in (011) direction on the (100) plane of an N type GaAs substrate 1. The first layer N type Ga0.65Al0.35As clad layer 2 having approx. 0.2mum of flat part and approx. 1mum of step, the second layer Ga0.95Al0.05As active layer 3 having approx. 0.1mum of step and approx. 0.08mum of flat part, the third layer P type Ga0.65Al0.35As clad layer 4 having approx. 1.5mum of step and approx. 0.4mum of flat part, and the fourth layer N type GaAs layer 5 having approx. 1mum of upper flat part of the step and approx. 2.5mum of lower flat part of the step are continuously growtn by liquid epitaxial process on the surface of the substrate 1. Thus, gold plating on the upper flat part of the step is selectively etched to remove the thickness of 1.2mum so as to flatten the surface. Then, Au is again plated in a thickness of 1mm on the surface, and is mounted on a heat dissipating unit 10.
JP6677580A 1980-05-19 1980-05-19 Manufacture of semiconductor laser Pending JPS56162895A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6677580A JPS56162895A (en) 1980-05-19 1980-05-19 Manufacture of semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6677580A JPS56162895A (en) 1980-05-19 1980-05-19 Manufacture of semiconductor laser

Publications (1)

Publication Number Publication Date
JPS56162895A true JPS56162895A (en) 1981-12-15

Family

ID=13325569

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6677580A Pending JPS56162895A (en) 1980-05-19 1980-05-19 Manufacture of semiconductor laser

Country Status (1)

Country Link
JP (1) JPS56162895A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5043895A (en) * 1973-08-20 1975-04-19
JPS5299793A (en) * 1976-02-18 1977-08-22 Agency Of Ind Science & Technol Semiconductor laser device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5043895A (en) * 1973-08-20 1975-04-19
JPS5299793A (en) * 1976-02-18 1977-08-22 Agency Of Ind Science & Technol Semiconductor laser device

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