JPS56162895A - Manufacture of semiconductor laser - Google Patents
Manufacture of semiconductor laserInfo
- Publication number
- JPS56162895A JPS56162895A JP6677580A JP6677580A JPS56162895A JP S56162895 A JPS56162895 A JP S56162895A JP 6677580 A JP6677580 A JP 6677580A JP 6677580 A JP6677580 A JP 6677580A JP S56162895 A JPS56162895 A JP S56162895A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- approx
- flat part
- substrate
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2238—Buried stripe structure with a terraced structure
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To largely improve the lifetime and the yield of a semiconductor laser by forming a layer including an active layer on a substrate having a stepwise diffrence, forming a metallic layer on the surface, removing the surface of the metallic layer and approximately flattening the surface of the metallic layer. CONSTITUTION:A step of 1.5mum of height is formed by etching in (011) direction on the (100) plane of an N type GaAs substrate 1. The first layer N type Ga0.65Al0.35As clad layer 2 having approx. 0.2mum of flat part and approx. 1mum of step, the second layer Ga0.95Al0.05As active layer 3 having approx. 0.1mum of step and approx. 0.08mum of flat part, the third layer P type Ga0.65Al0.35As clad layer 4 having approx. 1.5mum of step and approx. 0.4mum of flat part, and the fourth layer N type GaAs layer 5 having approx. 1mum of upper flat part of the step and approx. 2.5mum of lower flat part of the step are continuously growtn by liquid epitaxial process on the surface of the substrate 1. Thus, gold plating on the upper flat part of the step is selectively etched to remove the thickness of 1.2mum so as to flatten the surface. Then, Au is again plated in a thickness of 1mm on the surface, and is mounted on a heat dissipating unit 10.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6677580A JPS56162895A (en) | 1980-05-19 | 1980-05-19 | Manufacture of semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6677580A JPS56162895A (en) | 1980-05-19 | 1980-05-19 | Manufacture of semiconductor laser |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56162895A true JPS56162895A (en) | 1981-12-15 |
Family
ID=13325569
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6677580A Pending JPS56162895A (en) | 1980-05-19 | 1980-05-19 | Manufacture of semiconductor laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56162895A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5043895A (en) * | 1973-08-20 | 1975-04-19 | ||
JPS5299793A (en) * | 1976-02-18 | 1977-08-22 | Agency Of Ind Science & Technol | Semiconductor laser device |
-
1980
- 1980-05-19 JP JP6677580A patent/JPS56162895A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5043895A (en) * | 1973-08-20 | 1975-04-19 | ||
JPS5299793A (en) * | 1976-02-18 | 1977-08-22 | Agency Of Ind Science & Technol | Semiconductor laser device |
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