JPS54123887A - Photo integrated citcuit - Google Patents
Photo integrated citcuitInfo
- Publication number
- JPS54123887A JPS54123887A JP3138678A JP3138678A JPS54123887A JP S54123887 A JPS54123887 A JP S54123887A JP 3138678 A JP3138678 A JP 3138678A JP 3138678 A JP3138678 A JP 3138678A JP S54123887 A JPS54123887 A JP S54123887A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- metal
- type
- film
- type gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10329—Gallium arsenide [GaAs]
Landscapes
- Led Device Packages (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
PURPOSE: To make excellent the heat dissipation, by making the concave at a part of the semiconductor substrate on which a plurality of active regions are provided and implanting them with the metal layer, and by contacting the heat sink mounted on the substrate surface where no active region is formed with this metal layer.
CONSTITUTION: On the N type GaAs substrate 9, the N type GaAlAs layer 10, N type GaAs layer 11 are grown with lamination, and the N type Ga1-zAlzAs layer 12 is formed. Further, on a part of the layer 12, the double hetero laser region I consisting of the P type GaAs layer 13, P type Ga'1-zAl'zAs layer 14 and the metal film 15 is formed, and on another region, the optical conductive path II consisting of the N type GaAs layer 16 and the light modulation unit III providing the metal film 15 at the edge are formed. After that, the rear side of the substrate 9 is slectively etched and the concave reaching the layer 11 is made, and the Au-Sn electrode metal 17 is coated on this surface. Further, this is covered with SiO2 film, the concave is implanted with the plating metal 18 such as Au and Cu, the heat sink 19 in contact with the metal 18 is bonded by removing the SiO2 film.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3138678A JPS54123887A (en) | 1978-03-17 | 1978-03-17 | Photo integrated citcuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3138678A JPS54123887A (en) | 1978-03-17 | 1978-03-17 | Photo integrated citcuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54123887A true JPS54123887A (en) | 1979-09-26 |
Family
ID=12329813
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3138678A Pending JPS54123887A (en) | 1978-03-17 | 1978-03-17 | Photo integrated citcuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54123887A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5833888A (en) * | 1981-08-25 | 1983-02-28 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser |
JPS58215087A (en) * | 1982-06-07 | 1983-12-14 | Tokyo Inst Of Technol | Manufacture of plane light emission type laser element |
JPS59114884A (en) * | 1982-12-21 | 1984-07-03 | Fujitsu Ltd | Manufacture of semiconductor device |
US4661836A (en) * | 1981-06-25 | 1987-04-28 | Itt Industries Inc. | Fabricating integrated circuits |
-
1978
- 1978-03-17 JP JP3138678A patent/JPS54123887A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4661836A (en) * | 1981-06-25 | 1987-04-28 | Itt Industries Inc. | Fabricating integrated circuits |
JPS5833888A (en) * | 1981-08-25 | 1983-02-28 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser |
JPH049393B2 (en) * | 1981-08-25 | 1992-02-20 | ||
JPS58215087A (en) * | 1982-06-07 | 1983-12-14 | Tokyo Inst Of Technol | Manufacture of plane light emission type laser element |
JPH0381316B2 (en) * | 1982-06-07 | 1991-12-27 | Tokyo Kogyo Daigakucho | |
JPS59114884A (en) * | 1982-12-21 | 1984-07-03 | Fujitsu Ltd | Manufacture of semiconductor device |
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