JPS54123887A - Photo integrated citcuit - Google Patents

Photo integrated citcuit

Info

Publication number
JPS54123887A
JPS54123887A JP3138678A JP3138678A JPS54123887A JP S54123887 A JPS54123887 A JP S54123887A JP 3138678 A JP3138678 A JP 3138678A JP 3138678 A JP3138678 A JP 3138678A JP S54123887 A JPS54123887 A JP S54123887A
Authority
JP
Japan
Prior art keywords
layer
metal
type
film
type gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3138678A
Other languages
Japanese (ja)
Inventor
Takashi Sugino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP3138678A priority Critical patent/JPS54123887A/en
Publication of JPS54123887A publication Critical patent/JPS54123887A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10158—Shape being other than a cuboid at the passive surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/10329—Gallium arsenide [GaAs]

Landscapes

  • Led Device Packages (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: To make excellent the heat dissipation, by making the concave at a part of the semiconductor substrate on which a plurality of active regions are provided and implanting them with the metal layer, and by contacting the heat sink mounted on the substrate surface where no active region is formed with this metal layer.
CONSTITUTION: On the N type GaAs substrate 9, the N type GaAlAs layer 10, N type GaAs layer 11 are grown with lamination, and the N type Ga1-zAlzAs layer 12 is formed. Further, on a part of the layer 12, the double hetero laser region I consisting of the P type GaAs layer 13, P type Ga'1-zAl'zAs layer 14 and the metal film 15 is formed, and on another region, the optical conductive path II consisting of the N type GaAs layer 16 and the light modulation unit III providing the metal film 15 at the edge are formed. After that, the rear side of the substrate 9 is slectively etched and the concave reaching the layer 11 is made, and the Au-Sn electrode metal 17 is coated on this surface. Further, this is covered with SiO2 film, the concave is implanted with the plating metal 18 such as Au and Cu, the heat sink 19 in contact with the metal 18 is bonded by removing the SiO2 film.
COPYRIGHT: (C)1979,JPO&Japio
JP3138678A 1978-03-17 1978-03-17 Photo integrated citcuit Pending JPS54123887A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3138678A JPS54123887A (en) 1978-03-17 1978-03-17 Photo integrated citcuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3138678A JPS54123887A (en) 1978-03-17 1978-03-17 Photo integrated citcuit

Publications (1)

Publication Number Publication Date
JPS54123887A true JPS54123887A (en) 1979-09-26

Family

ID=12329813

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3138678A Pending JPS54123887A (en) 1978-03-17 1978-03-17 Photo integrated citcuit

Country Status (1)

Country Link
JP (1) JPS54123887A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5833888A (en) * 1981-08-25 1983-02-28 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser
JPS58215087A (en) * 1982-06-07 1983-12-14 Tokyo Inst Of Technol Manufacture of plane light emission type laser element
JPS59114884A (en) * 1982-12-21 1984-07-03 Fujitsu Ltd Manufacture of semiconductor device
US4661836A (en) * 1981-06-25 1987-04-28 Itt Industries Inc. Fabricating integrated circuits

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4661836A (en) * 1981-06-25 1987-04-28 Itt Industries Inc. Fabricating integrated circuits
JPS5833888A (en) * 1981-08-25 1983-02-28 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser
JPH049393B2 (en) * 1981-08-25 1992-02-20
JPS58215087A (en) * 1982-06-07 1983-12-14 Tokyo Inst Of Technol Manufacture of plane light emission type laser element
JPH0381316B2 (en) * 1982-06-07 1991-12-27 Tokyo Kogyo Daigakucho
JPS59114884A (en) * 1982-12-21 1984-07-03 Fujitsu Ltd Manufacture of semiconductor device

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