JPS56162867A - Composite thyristor - Google Patents

Composite thyristor

Info

Publication number
JPS56162867A
JPS56162867A JP6589480A JP6589480A JPS56162867A JP S56162867 A JPS56162867 A JP S56162867A JP 6589480 A JP6589480 A JP 6589480A JP 6589480 A JP6589480 A JP 6589480A JP S56162867 A JPS56162867 A JP S56162867A
Authority
JP
Japan
Prior art keywords
thyristor
diode
wafer
composite
ascr
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6589480A
Other languages
Japanese (ja)
Inventor
Sozaburo Hotta
Masato Ito
Hitoshi Kitahara
Makoto Iguchi
Kimihiro Muraoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyo Electric Manufacturing Ltd
Original Assignee
Toyo Electric Manufacturing Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Electric Manufacturing Ltd filed Critical Toyo Electric Manufacturing Ltd
Priority to JP6589480A priority Critical patent/JPS56162867A/en
Publication of JPS56162867A publication Critical patent/JPS56162867A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10156—Shape being other than a cuboid at the periphery

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To improve the characteristics of a composite thyristor upon turn-off by forming a small capacity bypass diode in the thyristor in which reverse conductive thyristor and a diode are connected in series. CONSTITUTION:A reverse conductive thyristor (ASCR) wafer 2 having a P-N-I-P- N junction and a diode wafer 3 having a P-N junction are integrated to form a composite thyristor. A small capacity bypass diode wafter 4 is connected in antiparallel to the ASCR wafer 2 between an intermediate supporting plate 22 and a cathode electrode 24'. Thus, the turn-off time of the composite thyristor is not affected by the influence of the reverse recovery time of the diode wafer 3, thereby facilitating the manufacture of and the application of the element.
JP6589480A 1980-05-20 1980-05-20 Composite thyristor Pending JPS56162867A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6589480A JPS56162867A (en) 1980-05-20 1980-05-20 Composite thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6589480A JPS56162867A (en) 1980-05-20 1980-05-20 Composite thyristor

Publications (1)

Publication Number Publication Date
JPS56162867A true JPS56162867A (en) 1981-12-15

Family

ID=13300121

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6589480A Pending JPS56162867A (en) 1980-05-20 1980-05-20 Composite thyristor

Country Status (1)

Country Link
JP (1) JPS56162867A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1124260A2 (en) * 2000-02-08 2001-08-16 Ngk Insulators, Ltd. Semiconductor device with reverse conducting faculty

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS498186A (en) * 1972-05-10 1974-01-24
JPS4975286A (en) * 1972-11-24 1974-07-19
JPS504512A (en) * 1973-05-08 1975-01-17

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS498186A (en) * 1972-05-10 1974-01-24
JPS4975286A (en) * 1972-11-24 1974-07-19
JPS504512A (en) * 1973-05-08 1975-01-17

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1124260A2 (en) * 2000-02-08 2001-08-16 Ngk Insulators, Ltd. Semiconductor device with reverse conducting faculty
EP1124260A3 (en) * 2000-02-08 2004-03-10 Ngk Insulators, Ltd. Semiconductor device with reverse conducting faculty

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