JPS5335477A - Semiconductor unit - Google Patents

Semiconductor unit

Info

Publication number
JPS5335477A
JPS5335477A JP11007776A JP11007776A JPS5335477A JP S5335477 A JPS5335477 A JP S5335477A JP 11007776 A JP11007776 A JP 11007776A JP 11007776 A JP11007776 A JP 11007776A JP S5335477 A JPS5335477 A JP S5335477A
Authority
JP
Japan
Prior art keywords
conductive type
substrate
area
opposite
semiconductor unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11007776A
Other languages
Japanese (ja)
Inventor
Hiroshi Iwasaki
Osamu Ozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11007776A priority Critical patent/JPS5335477A/en
Publication of JPS5335477A publication Critical patent/JPS5335477A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: The area of the same conductive type as a substrate and the area of the conductive type opposite to the substrate are alternately provided adjacently on the semiconductor substrate of one-way conductive type, and the depletion layer between this opposite conductive type area and the substrate is constituted so that they may come into contact with each other in case of zero bias, thereby improving a pressureproof efficiency between a collector and an emitter and increasing a current amplification factor.
COPYRIGHT: (C)1978,JPO&Japio
JP11007776A 1976-09-14 1976-09-14 Semiconductor unit Pending JPS5335477A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11007776A JPS5335477A (en) 1976-09-14 1976-09-14 Semiconductor unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11007776A JPS5335477A (en) 1976-09-14 1976-09-14 Semiconductor unit

Publications (1)

Publication Number Publication Date
JPS5335477A true JPS5335477A (en) 1978-04-01

Family

ID=14526439

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11007776A Pending JPS5335477A (en) 1976-09-14 1976-09-14 Semiconductor unit

Country Status (1)

Country Link
JP (1) JPS5335477A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5318392A (en) * 1976-08-03 1978-02-20 Handotai Kenkyu Shinkokai Semiconductor ic

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5318392A (en) * 1976-08-03 1978-02-20 Handotai Kenkyu Shinkokai Semiconductor ic

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