JPS56160069A - Output circuit for charge transfer element - Google Patents

Output circuit for charge transfer element

Info

Publication number
JPS56160069A
JPS56160069A JP6095980A JP6095980A JPS56160069A JP S56160069 A JPS56160069 A JP S56160069A JP 6095980 A JP6095980 A JP 6095980A JP 6095980 A JP6095980 A JP 6095980A JP S56160069 A JPS56160069 A JP S56160069A
Authority
JP
Japan
Prior art keywords
capacity
transfer element
charge transfer
output circuit
term
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6095980A
Other languages
Japanese (ja)
Inventor
Takahisa Tsuchiya
Mitsuo Soneda
Isa Nakamura
Masaharu Tokuhara
Hiroyuki Kita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP6095980A priority Critical patent/JPS56160069A/en
Publication of JPS56160069A publication Critical patent/JPS56160069A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76816—Output structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To remove the influences of a floating capacity and a current-amplification factor by a method wherein a sensitivity coefficient of the output circuit of the charge transfer element is changed in magnification depending on the suspension capacity, the current-amplification factor and the ratio of division. CONSTITUTION:The capacity at an arbitraily selected step of the charge transfer element is divided in the ratio proportional to a desired sensitive coefficient, clock signals being fed to coldend sides of the divided capacities, and also, the sensitivity coefficient is taken as shown by the formula at the right, in the output circuit of the charge transfer element adapted to obtain the output which the charge flowing in the capacity on one side is detected and weighted by the desired sensitivity coefficient. A signal level fall caused by the floating capacity is compensated by the term (C+Cs)/C, a base earth current-amplification factor of a detection transistor is compensated by the term 1/alpha and the output signal level of the BBD-constructed transistor is adjusted by the term (1/alpha')<n>.
JP6095980A 1980-05-08 1980-05-08 Output circuit for charge transfer element Pending JPS56160069A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6095980A JPS56160069A (en) 1980-05-08 1980-05-08 Output circuit for charge transfer element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6095980A JPS56160069A (en) 1980-05-08 1980-05-08 Output circuit for charge transfer element

Publications (1)

Publication Number Publication Date
JPS56160069A true JPS56160069A (en) 1981-12-09

Family

ID=13157443

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6095980A Pending JPS56160069A (en) 1980-05-08 1980-05-08 Output circuit for charge transfer element

Country Status (1)

Country Link
JP (1) JPS56160069A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0563846A1 (en) * 1992-03-30 1993-10-06 Matsushita Electric Industrial Co., Ltd. Dynamic peaking aperture correction for use with a CCD camera

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0563846A1 (en) * 1992-03-30 1993-10-06 Matsushita Electric Industrial Co., Ltd. Dynamic peaking aperture correction for use with a CCD camera
US5418563A (en) * 1992-03-30 1995-05-23 Panasonic Technologies, Inc. Dynamic peaking aperture correction for use with a CCD camera

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