JPS56150878A - Semiconductor image pickup device - Google Patents

Semiconductor image pickup device

Info

Publication number
JPS56150878A
JPS56150878A JP5400180A JP5400180A JPS56150878A JP S56150878 A JPS56150878 A JP S56150878A JP 5400180 A JP5400180 A JP 5400180A JP 5400180 A JP5400180 A JP 5400180A JP S56150878 A JPS56150878 A JP S56150878A
Authority
JP
Japan
Prior art keywords
layer
region
type
high resistance
electric field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5400180A
Other languages
Japanese (ja)
Other versions
JPS6117150B2 (en
Inventor
Junichi Nishizawa
Tadahiro Omi
Naoshige Tamamushi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP5400180A priority Critical patent/JPS56150878A/en
Priority to EP81301732A priority patent/EP0038697B1/en
Priority to DE8181301732T priority patent/DE3167682D1/en
Publication of JPS56150878A publication Critical patent/JPS56150878A/en
Publication of JPS6117150B2 publication Critical patent/JPS6117150B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14679—Junction field effect transistor [JFET] imagers; static induction transistor [SIT] imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE:To improve the sensitivity and the resolution of a semiconductor image pickup device as compared with both CCD and MOS image sensors by providing a plurality of cells of hook structure in which a high resistance region for substantially detecting a light and a high impurity density region having different conductivity type from the high resistance region are connected in a semiconductor substrate. CONSTITUTION:A light input introduced through a transparent electrode 4 to which a predetermined bias voltage Vs(+) is applied generates electron and hole pairs in a high resistance layer 6 specially in the vicinity of an n<+> type layer 5 of a hook structure. The layer 6 is completely depleted in the entire region by the applied voltage Vs, and an electric field to run the carrier at a saturated speed is applied to almost all the region. The generated electrons are attracted by the Vs(+) bias and absorbed by the layer 5, and the holes generated in pairs are stored in a p<+> type region 7. This is because an i type region 6 is depleted by the bias voltage Vs(+) and a strong electric field is applied to the entire thickness l of the i type layer. When the holes are stored in an p<+> type layer 7, the layer 7 is charged positively. Accordingly, electrons in an n<+> type region 8 override the thin layer 7 and flow to the side of the substrate.
JP5400180A 1980-04-22 1980-04-22 Semiconductor image pickup device Granted JPS56150878A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP5400180A JPS56150878A (en) 1980-04-22 1980-04-22 Semiconductor image pickup device
EP81301732A EP0038697B1 (en) 1980-04-22 1981-04-21 Semiconductor image sensor
DE8181301732T DE3167682D1 (en) 1980-04-22 1981-04-21 Semiconductor image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5400180A JPS56150878A (en) 1980-04-22 1980-04-22 Semiconductor image pickup device

Publications (2)

Publication Number Publication Date
JPS56150878A true JPS56150878A (en) 1981-11-21
JPS6117150B2 JPS6117150B2 (en) 1986-05-06

Family

ID=12958354

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5400180A Granted JPS56150878A (en) 1980-04-22 1980-04-22 Semiconductor image pickup device

Country Status (1)

Country Link
JP (1) JPS56150878A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1984001076A1 (en) * 1982-09-09 1984-03-15 Fuji Photo Film Co Ltd Semiconductor image pickup device
US4731665A (en) * 1984-12-28 1988-03-15 Canon Kabushiki Kaisha Image sensing apparatus with read-out of selected combinations of lines
US4737832A (en) * 1985-04-01 1988-04-12 Canon Kabushiki Kaisha Optical signal processor
EP0391502A2 (en) 1983-07-02 1990-10-10 Canon Kabushiki Kaisha Photoelectric converter
EP1453099A2 (en) * 2003-02-26 2004-09-01 Dialog Semiconductor Vertical charge transfer active pixel sensor
US7256386B2 (en) 2000-04-20 2007-08-14 Digirad Corporation Fabrication of low leakage-current backside illuminated photodiodes

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1984001076A1 (en) * 1982-09-09 1984-03-15 Fuji Photo Film Co Ltd Semiconductor image pickup device
US4673985A (en) * 1982-09-09 1987-06-16 Fuji Photo Film Co., Ltd. Semiconductor image sensor
EP0391502A2 (en) 1983-07-02 1990-10-10 Canon Kabushiki Kaisha Photoelectric converter
US4731665A (en) * 1984-12-28 1988-03-15 Canon Kabushiki Kaisha Image sensing apparatus with read-out of selected combinations of lines
US4816910A (en) * 1984-12-28 1989-03-28 Canon Kabushiki Kaisha Image sensing apparatus
US4737832A (en) * 1985-04-01 1988-04-12 Canon Kabushiki Kaisha Optical signal processor
US7256386B2 (en) 2000-04-20 2007-08-14 Digirad Corporation Fabrication of low leakage-current backside illuminated photodiodes
US7297927B2 (en) 2000-04-20 2007-11-20 Digirad Corporation Fabrication of low leakage-current backside illuminated photodiodes
US7417216B2 (en) 2000-04-20 2008-08-26 Digirad Corporation Fabrication of low leakage-current backside illuminated photodiodes
EP1453099A2 (en) * 2003-02-26 2004-09-01 Dialog Semiconductor Vertical charge transfer active pixel sensor
EP1453099A3 (en) * 2003-02-26 2006-06-28 Dialog Semiconductor Vertical charge transfer active pixel sensor

Also Published As

Publication number Publication date
JPS6117150B2 (en) 1986-05-06

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