JPS5511314A - Thyristor - Google Patents
ThyristorInfo
- Publication number
- JPS5511314A JPS5511314A JP8303478A JP8303478A JPS5511314A JP S5511314 A JPS5511314 A JP S5511314A JP 8303478 A JP8303478 A JP 8303478A JP 8303478 A JP8303478 A JP 8303478A JP S5511314 A JPS5511314 A JP S5511314A
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- ring
- ring gate
- gate electrode
- facing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010304 firing Methods 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To obtain a high dv/dt insulation resistance, by providing a control emitter of the same conducting type as an N emitter along a ring gate on the side not facing an N emitter of the ring gate. CONSTITUTION:On the side not facing N emitter 8 of ring gate electrode 3, ring- shaped control emitter 11 having the same conducting type as N emitter 8 is formed along ring gate electrode 3. By this control emitter 11, it is made possible to adjust resistor R2 in P base 7 between ring gate electrode 3 and ring 4 and to check the increase of the gate current not contributing to the firing of the main SCR. By this, the firing current of the main SCR can be reduced and at the same time a high dv/dt insulation resistance can be obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8303478A JPS5511314A (en) | 1978-07-10 | 1978-07-10 | Thyristor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8303478A JPS5511314A (en) | 1978-07-10 | 1978-07-10 | Thyristor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5511314A true JPS5511314A (en) | 1980-01-26 |
Family
ID=13790932
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8303478A Pending JPS5511314A (en) | 1978-07-10 | 1978-07-10 | Thyristor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5511314A (en) |
-
1978
- 1978-07-10 JP JP8303478A patent/JPS5511314A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5511314A (en) | Thyristor | |
JPS5680165A (en) | Gate turn-off thyristor | |
JPS5286049A (en) | Semiconductor switch | |
JPS5250176A (en) | Electrostatic induction type thyristor | |
JPS5784175A (en) | Semiconductor device | |
JPS5580352A (en) | Transistor with high breakdown voltage | |
JPS5651863A (en) | Gate turn-off thyrister | |
JPS51114081A (en) | Construction of a semi-conductor device | |
JPS56148864A (en) | Thyristor | |
JPS5383477A (en) | Reverse conducting thyristor | |
JPS5368558A (en) | Protective device for gate turn-off thyristor | |
JPS5395583A (en) | Mesa type semiconductor device | |
JPS53126283A (en) | Semiconductor controlling rectifier | |
JPS5484983A (en) | Thyristor | |
JPS5556658A (en) | Thyristor | |
JPS5263687A (en) | Semiconductor device | |
JPS5211778A (en) | Semiconductor controlled rectifier | |
JPS52120689A (en) | High voltage durability semi-conductor controlled rectifying element | |
JPS57157571A (en) | Gto thyristor of amplification type gate structure | |
JPS5419679A (en) | Thyristor | |
JPS5382183A (en) | Thyristor of amplifying gate type | |
JPS5422180A (en) | Thyristor | |
JPS51116963A (en) | A.c. control circuit | |
JPS51145282A (en) | Thyrlstor | |
JPS5660057A (en) | Semiconductor device |