JPS56137591A - Semiconductor memory device - Google Patents
Semiconductor memory deviceInfo
- Publication number
- JPS56137591A JPS56137591A JP4156980A JP4156980A JPS56137591A JP S56137591 A JPS56137591 A JP S56137591A JP 4156980 A JP4156980 A JP 4156980A JP 4156980 A JP4156980 A JP 4156980A JP S56137591 A JPS56137591 A JP S56137591A
- Authority
- JP
- Japan
- Prior art keywords
- row
- column
- lines
- line
- readout speed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
Abstract
PURPOSE:To increase the readout speed, by discharge of the column line of memory cell from the address data change to the row line designated. CONSTITUTION:A plurality of row lines 191-19n and column lines 201-20m are arranged in matrix, and the memory element is provided at each crossing. The designation of row and column lines is made at row and column recorders 21, 22. While the row line is designated after the address data A0-Am are changed, the pulse generating circuit 27 generating the pulse in which the signal P is at ''1'' level, is provided. This signal turns on the transistors 261-26m, and the row lines 201- 20m are discharged. Thus, since the row line is discharged during a given time, the delay in the readout speed due to discharge time can be avoided and the readout speed can be increased.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55041569A JPS6027118B2 (en) | 1980-03-31 | 1980-03-31 | semiconductor memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55041569A JPS6027118B2 (en) | 1980-03-31 | 1980-03-31 | semiconductor memory device |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62081094A Division JPS63302495A (en) | 1987-04-03 | 1987-04-03 | Semiconductor memory device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56137591A true JPS56137591A (en) | 1981-10-27 |
JPS6027118B2 JPS6027118B2 (en) | 1985-06-27 |
Family
ID=12612071
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55041569A Expired JPS6027118B2 (en) | 1980-03-31 | 1980-03-31 | semiconductor memory device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6027118B2 (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5968894A (en) * | 1982-10-12 | 1984-04-18 | Hitachi Ltd | Data line driving circuit in eprom device |
JPS59186198A (en) * | 1983-04-08 | 1984-10-22 | Seiko Epson Corp | Semiconductor storage device |
JPS60187998A (en) * | 1984-03-07 | 1985-09-25 | Mitsubishi Electric Corp | Semiconductor integrated circuit device |
JPS60263399A (en) * | 1984-06-08 | 1985-12-26 | Nec Corp | Semoconductor memory device |
JPS626494A (en) * | 1985-03-18 | 1987-01-13 | Nec Corp | Semiconductor storage device |
JPS63117398A (en) * | 1986-11-05 | 1988-05-21 | Nec Corp | Reading circuit |
US5138575A (en) * | 1988-12-19 | 1992-08-11 | Fujitsu Limited | Electricaly erasable and programmable read only memory with a discharge device |
-
1980
- 1980-03-31 JP JP55041569A patent/JPS6027118B2/en not_active Expired
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5968894A (en) * | 1982-10-12 | 1984-04-18 | Hitachi Ltd | Data line driving circuit in eprom device |
JPS59186198A (en) * | 1983-04-08 | 1984-10-22 | Seiko Epson Corp | Semiconductor storage device |
JPS60187998A (en) * | 1984-03-07 | 1985-09-25 | Mitsubishi Electric Corp | Semiconductor integrated circuit device |
JPS60263399A (en) * | 1984-06-08 | 1985-12-26 | Nec Corp | Semoconductor memory device |
JPH0449200B2 (en) * | 1984-06-08 | 1992-08-10 | Nippon Electric Co | |
JPS626494A (en) * | 1985-03-18 | 1987-01-13 | Nec Corp | Semiconductor storage device |
JPS63117398A (en) * | 1986-11-05 | 1988-05-21 | Nec Corp | Reading circuit |
US5138575A (en) * | 1988-12-19 | 1992-08-11 | Fujitsu Limited | Electricaly erasable and programmable read only memory with a discharge device |
Also Published As
Publication number | Publication date |
---|---|
JPS6027118B2 (en) | 1985-06-27 |
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