JPS5613743A - Semiconductor device and its manufacture - Google Patents

Semiconductor device and its manufacture

Info

Publication number
JPS5613743A
JPS5613743A JP9019679A JP9019679A JPS5613743A JP S5613743 A JPS5613743 A JP S5613743A JP 9019679 A JP9019679 A JP 9019679A JP 9019679 A JP9019679 A JP 9019679A JP S5613743 A JPS5613743 A JP S5613743A
Authority
JP
Japan
Prior art keywords
layers
epitaxial layer
masks
field oxide
oxide films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9019679A
Other languages
Japanese (ja)
Inventor
Osamu Hataishi
Yoshinobu Monma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9019679A priority Critical patent/JPS5613743A/en
Publication of JPS5613743A publication Critical patent/JPS5613743A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
    • H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers

Abstract

PURPOSE:To prevent punching-through and miniaturize a device by a method wherein impurity regions with high concentration are formed just under thick field oxide films. CONSTITUTION:An oxide film 11 is formed to an N-epitaxial layer on a P-type Si substrate. The masks 12 of nitrising films are made up, the epitaxial layer 7 is slightly etched, resist masks 13 are coacted, and phosphorous ions are injected to a region 14. The masks 13 are removed, and field oxide films 1 are formed according to wet oxidation. N<+>-Layers 15 are made up on the surface of an epitaxial layer 7 of a lower layer of the field oxide films 1 at that time. The N-epitaxial layer 7 is separated by P<+>-type layers 3 according to a known method, and P<+> base layers 4 are formed. According to this constitution, when voltage is applied when working, the N<+>-layers 15 prevent the extents of depletion layers from the P<+>-layers 3, 4, and punching-through is not formed. Thus, minute patterns are made up, and a device can be miniaturized.
JP9019679A 1979-07-16 1979-07-16 Semiconductor device and its manufacture Pending JPS5613743A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9019679A JPS5613743A (en) 1979-07-16 1979-07-16 Semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9019679A JPS5613743A (en) 1979-07-16 1979-07-16 Semiconductor device and its manufacture

Publications (1)

Publication Number Publication Date
JPS5613743A true JPS5613743A (en) 1981-02-10

Family

ID=13991719

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9019679A Pending JPS5613743A (en) 1979-07-16 1979-07-16 Semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS5613743A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60118785A (en) * 1983-11-29 1985-06-26 Kawasaki Heavy Ind Ltd Absorbing solution for absorption refrigerator
US5061654A (en) * 1987-07-01 1991-10-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit having oxide regions with different thickness
JPH04116932A (en) * 1990-09-07 1992-04-17 Mitsubishi Electric Corp Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5456357A (en) * 1977-10-14 1979-05-07 Hitachi Ltd Production of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5456357A (en) * 1977-10-14 1979-05-07 Hitachi Ltd Production of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60118785A (en) * 1983-11-29 1985-06-26 Kawasaki Heavy Ind Ltd Absorbing solution for absorption refrigerator
US5061654A (en) * 1987-07-01 1991-10-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit having oxide regions with different thickness
JPH04116932A (en) * 1990-09-07 1992-04-17 Mitsubishi Electric Corp Semiconductor device

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