JPS56135963A - Semiconductor ic for temperature sensor - Google Patents

Semiconductor ic for temperature sensor

Info

Publication number
JPS56135963A
JPS56135963A JP3946280A JP3946280A JPS56135963A JP S56135963 A JPS56135963 A JP S56135963A JP 3946280 A JP3946280 A JP 3946280A JP 3946280 A JP3946280 A JP 3946280A JP S56135963 A JPS56135963 A JP S56135963A
Authority
JP
Japan
Prior art keywords
current
temperature sensor
base
constant
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3946280A
Other languages
Japanese (ja)
Inventor
Yoshikazu Kojima
Masaaki Kamiya
Masayuki Namiki
Kojiro Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP3946280A priority Critical patent/JPS56135963A/en
Publication of JPS56135963A publication Critical patent/JPS56135963A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)

Abstract

PURPOSE:To obtain the semiconductor integrated circuit for a temperature sensor which has little irregularity and is excellent in productivity by using a emitter-base junction as the temperature sensor and by connecting thereto a constant-current circuit of an insulated gate type transistor. CONSTITUTION:When the collector of a bipolar transistor and the base are connected, base-emitter current I turns to be the same in property with the voltage current of a diode and is changed according to temperature. A source of constant current is connected to the bipolar transistor and fixed current is made to flow therethrough to measure base-emitter voltage, whereby it can be used as the temperature sensor. As the source of constant current, a constant-current circuit constituted by an integrated circuit of complementary insulated gate field-effect type is used. The device can be manufactured in the same IC manufacturing process with that of other elements and thereby irregularity of characteristics can be reduced.
JP3946280A 1980-03-27 1980-03-27 Semiconductor ic for temperature sensor Pending JPS56135963A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3946280A JPS56135963A (en) 1980-03-27 1980-03-27 Semiconductor ic for temperature sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3946280A JPS56135963A (en) 1980-03-27 1980-03-27 Semiconductor ic for temperature sensor

Publications (1)

Publication Number Publication Date
JPS56135963A true JPS56135963A (en) 1981-10-23

Family

ID=12553709

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3946280A Pending JPS56135963A (en) 1980-03-27 1980-03-27 Semiconductor ic for temperature sensor

Country Status (1)

Country Link
JP (1) JPS56135963A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4546373A (en) * 1983-02-07 1985-10-08 The General Electric Company, P.L.C. Semiconductor device with a tantalum iridium barrier layer contact structure
US4639755A (en) * 1981-09-01 1987-01-27 Kabushiki Kaisha Daini Seikosha Thermosensitive semiconductor device using Darlington circuit
US7139186B2 (en) 2004-04-23 2006-11-21 Nec Electronics Corporation Failure detection circuit
US8152371B2 (en) 2008-04-11 2012-04-10 Renesas Electronics Corporation Temperature sensor circuit with reference voltage that exhibits the same nonlinear temperature response as the temperature sensor
JP2014093934A (en) * 2012-11-01 2014-05-19 Samsung Electro-Mechanics Co Ltd PWM signal generation circuit and motor Drive circuit
JP6045611B2 (en) * 2013-02-08 2016-12-14 三菱電機株式会社 Gate drive circuit

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4639755A (en) * 1981-09-01 1987-01-27 Kabushiki Kaisha Daini Seikosha Thermosensitive semiconductor device using Darlington circuit
US4546373A (en) * 1983-02-07 1985-10-08 The General Electric Company, P.L.C. Semiconductor device with a tantalum iridium barrier layer contact structure
US7139186B2 (en) 2004-04-23 2006-11-21 Nec Electronics Corporation Failure detection circuit
US8152371B2 (en) 2008-04-11 2012-04-10 Renesas Electronics Corporation Temperature sensor circuit with reference voltage that exhibits the same nonlinear temperature response as the temperature sensor
JP2014093934A (en) * 2012-11-01 2014-05-19 Samsung Electro-Mechanics Co Ltd PWM signal generation circuit and motor Drive circuit
US8994309B2 (en) 2012-11-01 2015-03-31 Samsung Electro-Mechanics Co., Ltd. Pulse width modulation signal generating circuit and motor driving circuit
JP6045611B2 (en) * 2013-02-08 2016-12-14 三菱電機株式会社 Gate drive circuit
JPWO2014123046A1 (en) * 2013-02-08 2017-02-02 三菱電機株式会社 Gate drive circuit
US9608618B2 (en) 2013-02-08 2017-03-28 Mitsubishi Electric Corporation Gate driving circuit including a temperature detection circuit for reducing switching loss and switching noise

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